Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3 Dielectric Heterojunction Diode with Reverse Blocking Voltage of 1010 V

Zhuangzhuang Hu,Jianguo Li,Chunyong Zhao,Zhaoqing Feng,Xusheng Tian,Yanni Zhang,Yachao Zhang,Jing Ning,Hong Zhou,Chunfu Zhang,Yuanjie Lv,Xuanwu Kang,Hao Feng,Qian Feng,Jincheng Zhang,Yue Hao

DOI: https://doi.org/10.1109/ted.2020.3033787

IF: 3.1

2020-01-01

IEEE Transactions on Electron Devices

Abstract:This work provides insight into the design principles and the reasonable construction of Ga 2 O 3 heterojunction diode. We chose TiO 2 grown by atomic layer deposition (ALD) as a suitable insulator with a small conduction band offset of TiO<;span style="font-size: 14.5px;"> 2 /<;/span> β -Ga 2 O 3 heterojunction and a large dielectric constant. The type-I band alignment of the TiO 2 / β -Ga 2 O 3 heterojunction was obtained using X-ray photoelectron spectroscopy (XPS). We demonstrated a high-performance vertical metal/TiO 2 / β -Ga 2 O 3 dielectric heterojunction diode with reverse blocking voltage of 1010 V and differential ON-resistance of 3.3 mΩ·cm 2 . The proposed design principles of dielectric heterojunction diode and the insulator selection can also provide a simple, effective, and feasible technology for other wideband and ultrawideband semiconductors in which bipolar doping is challenging to achieve high power device performance.