Abstract:This study emphasizes deterministic current‐induced spin‐orbit torque magnetization switching in CoFeB‐based systems with perpendicular magnetic anisotropy, achieving an impressive switching ratio nearing 100% without the need for a collinear in‐plane field. The integration of NiO as an antiferromagnetic insulator is vital for generating the out‐of‐plane spin polarization component σz, opening up exciting prospects for advancements in spintronics and innovative technologies. In this study, deterministic current‐induced spin‐orbit torque (SOT) magnetization switching is achieved, particularly in systems with perpendicular magnetic anisotropy (PMA), without the need for a collinear in‐plane field, a traditionally challenging requirement. In a Ta/CoFeB/MgO/NiO/Ta structure, spin reflection at the MgO/NiO interface generates a spin current with an out‐of‐plane spin polarization component σz. Notably, the sample featuring 0.8 nm MgO and 2 nm NiO demonstrates an impressive optimal switching ratio approaching 100% without any in‐plane field. A systematic investigation of the effects of the MgO and NiO thickness demonstrates that the formation of noncollinear spin structures and canted magnetization in the ultrathin NiO interlayer plays a pivotal role to the field‐free SOT switching. The integration of NiO as an antiferromagnetic insulator effectively mitigates current shunting effects and enhances the thermal stability of the device. This advancement in the CoFeB/MgO system holds promise for significant applications in spintronics, marking a crucial step toward realizing innovative technologies.

Spintronics: Electrical Control of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque‐Induced Magnetization Switching (Adv. Electron. Mater. 3/2020)

Spin–Orbit Torque-Driven Magnetic Switching of Co/Pt-CoFeB Exchange Spring Ferromagnets

Tunable Magnetic Anisotropy in Perpendicular Exchange-Coupled CoFeB/(Co/Pt) Films

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Spin-orbit torques and magnetization switching in perpendicularly magnetized epitaxial Pd/Co2FeAl/MgO structures

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

Tunable Spin–orbit Torque Switching in Antiferromagnetically Coupled CoFeB/Ta/CoFeB

Field-free Spin-Orbit Torque-Induced Perpendicular Magnetization Switching in YIG/Ta/CoTb/Pt

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N

Electrical Control of Spin Hall Efficiency and Field-Free Magnetization Switching in W/Pt/Co/Pt Heterostructures with Competing Spin Currents

Magnetization Switching by Spin–Orbit Torque in L10-FePt and Ta/FePt Films with Large Perpendicular Magnetic Anisotropy

Field-free spin-orbit torque switching of composite perpendicular CoFeB/Gd/CoFeB layers utilized for three-terminal magnetic tunnel junctions

Giant Anomalous Charge-Spin Conversion at Co/Pb(Mg1/3Nb2/3)O3–Pb0.7Ti0.3O3 Interfaces

Out-of-Plane Polarization from Spin Reflection Induces Field-Free Spin-Orbit Torque Switching in Structures with Canted NiO Interfacial Moments

Voltage Controlled Spin-Orbit Torque Switching in W/CoFeB/MgO

Spin–orbit Torque-Induced Magnetization Switching in Pt/Co–Tb/Ta Structures

Enhanced Spin–orbit Torque Switching in Perpendicular Multilayers Via Interfacial Oxygen Tunability

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Study Of Spin-Orbit Torque Induced Magnetization Switching In Synthetic Antiferromagnet With Ultrathin Ta Spacer Layer

Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures

Deterministic switching of perpendicular magnetization by out-of-plane anti-damping magnon torques