Modulating Optical Polarization of Al-rich AlGaN via Mg Dopant

Tongchang ZHENG,Wei LIN,Duanjun CAI,Jinchai LI,Shuping LI,Junyong KANG

DOI: https://doi.org/10.6043/j.issn.0438-0479.2016.02.016

2016-01-01

Abstract:The development of Al-rich AlGaN suffers from the optical polarization E∥c which is unfavorable for light extraction ef-ficiency for optoelectronic devices grown on the c-plane,especially for Al-rich AlGaN.Based on first-principle simulations,the com-plex physics behind the optical polarization probably stems from the fact that the lattice parameter c/a ratio deviates from the ideal value for a hexagonal close-packed crystal structure.It is found that c/a ratio increases as Al content increases.The resulting crystal-field splitting energyΔcr varies from 40 meV to 0 meV as Al content increases from 0 to 0.5,and finally drops down to -197 meV in AlN.The band engineering via Mg-doping strained AlGaN quantum structure allows modulation of the band structure especially at valence band maximum to change the valence band order so as to switch the emitted light polarization to ordinary light polarization, motivating further experimental work on improving light extraction efficiency in Al-rich AlGaN.