Influence of Dc Power and Oxygen Partial Pressure on the Electrical and Optical Properties of Indium-Tin-oxide Films
WANG Sheng-hao,ZHANG Jing-quan,WANG Bo,FENG Liang-huan,CAI Ya-ping,LEI Zhi,LI Bing,WU Li-li,LI Wei,ZENG Guang-gen,ZHENG Jia-gui,CAI Wei
DOI: https://doi.org/10.3321/j.issn:1001-9731.2009.05.004
2009-01-01
Abstract:Indium-tin-oxide(ITO) films were deposited on glass substrate by DC magnetron sputtering.The effects of DC power and oxygen partial pressure on the microstructure,electrical and optical properties of the ITO thin films were studied by four-point probe,X-ray diffraction(XRD),UV-vis spectrometer,hall measurement and scanning electrical microscope(SEM).The results showed that the films had a preferred orientation in the(222) plane.DC power had little influence on the optoelectrical properties of the ITO films and the deposition rate increased with the increase of DC power.As oxygen partial pressure increased,the Hall mobility of the films increased initially and then decreased while the charge carrier concentration decreased and the resistivity increased.As a result,ITO films with a resistivity of 1×10-4Ω·cm,and an average transmittance of 85% in the visible spectrum were deposited successfully.