Study on the Optical and Electrical Properties of ITO Thin Films Deposited by R.F.Magnetron Sputtering

XIA Dong-lin,YANG Sheng,WANG Shu-lin,ZHAO Xiu-jian

DOI: https://doi.org/10.3969/j.issn.1000-2871.2006.04.003

2006-01-01

Abstract:Tin-doped Indium Oxide(ITO)thin films have been deposited onto glass substrates by radio frequency(R.F.) magnetron sputtering using ITO sintered target containing 10% SnO_2 and 90% In_2O_3(in mass).The effects of temperature of substrate and oxygen partial pressures on the electrical and optical properties of ITO thin film have been investigated.It is observed that ITO thin films show a high degree of(222) orientation.The absorption edge of ITO thin films shifted toward lower wavelength with increasing substrate temperature and oxygen partial pressures.