Abstract:Pulsed DC magnetron sputtering was used to deposit indium‑tin-oxide (ITO) thin films on glass substrates for application in photovoltaic devices as the final window layer. The evolution of crystal phase, morphology, resistivity and transmittance of the ITO films under different thermal annealing procedure (in-situ annealing versus post-annealing) at relatively low temperatures (up to 300°C) were studied. Fully crystalline ITO films with low sheet resistance of 24Ω/□ and high average transmittance (exclude glass substrate) of 90.10% with a Haacke's figure of merit 1.47×10−2Ω−1 were obtained by in-situ annealing at 200°C. In comparison, the minimum temperature observed to fully crystalize the ITO thin films with competitive crystallinity, electrical and optical properties by post-annealing was 250°C. The corresponding post-annealed 300nm thick films showed sheet resistance of 49Ω/□ and average transmittance (exclude glass substrate) as high as 91.93% with a Haacke's figure of merit 0.882×10−2Ω−1. The surface morphology of the as-deposited ITO films remained homogeneous after post-annealing whereas large particles (up to 100nm) were observed on the surface of the films deposited by in-situ annealing. The results indicated that different thermal treatment procedures at lower temperatures produce significant effect on the electrical, optical and other physical properties of the ITO thin films which are critical for the window layer in photovoltaics.

Effects of Annealing Temperature of Indium Tin Oxide Thin Films Prepared Onto Glass by Sol-Gel Spin Coating Method

Effect of Different Thermo-Treatment at Relatively Low Temperatures on the Properties of Indium‑tin-Oxide Thin Films

Influence Of Annealing Atmosphere On The Characteristics Of Sol-Gel Derived Ito Thin Films

Effects of Air Annealing on the Structure, Resistivity, Infrared Emissivity and Transmission of Indium Tin Oxide Films

Investigation of Annealing Effect on the Electrical and Optical Properties of Ito Film Prepared by Sol-Gel Process

Influence of Thermal Annealing on Electrical and Optical Properties of Indium Tin Oxide Thin Films

Influence of Annealing Time on Structure, Morphology and Property of ITO Thin Films Prepared by Sol-gel Process

Influence of Annealing Temperature on the Microstructure and Electrical Properties of Indium Tin Oxide Thin Films

Annealing Effect on ITO Films Prepared by DC Magnetron Sputtering

Effect of Annealing Temperature on the Microstructure and Photoelectrical Properties of ITO Films

Correlation between microstructure and electrical, optical properties of thermal annealed ITO thin films

The Effects Of Annealing On Characteristics Of The Ito Films

Structural and electronic properties of indium-tin-oxide sol-gel films for various post-annealing treatment

Air-Annealing Effects on Sio2/Ito Coating

Effects of Annealing Temperature on the Structure and Electrochromic Properties of TiO2 Films

Effects of Annealing Temperature on the Structure of ITO Films Properties When Quenching in Air and N2

Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target

Effects of Heat Treatment on Properties of ITO Films Prepared by Rf Magnetron Sputtering

Thin Indium-Tin-Oxide Film Produced Through Sol–Gel Method with Its Morphological and Electrical Properties

Study on the Effect of Ar/O2 on the Performance of ITO Film Sputtered on the Transparent Ceramic Substrate

Effect of Ultraviolet Irradiation on Photoelectric Properties of Indium Tin Oxide (ito) Thin Film Deposited by Sol-Gel Method