Microstructures and stoichiometrics of indium-tin-oxide films

Qi Cai,Chunbin Cao,Xishun Jiang,Xueping Song,Zhaoqi Sun
2007-01-01
Abstract:Microstructures and stoichiometrics of the transparent conductive indium-tin-oxide (ITO) films, grown by DC magnetron sputtering, were characterized with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The results show that the annealing time significantly affects the mcirostructures of ITO films. The polycrystalline ITO films were a solid solution with Sn diffused into In 2O 3 lattice. As the annealing time increases, SnO is oxidized into SnO 2, and the crystalhnity of ITO films improves. Moreover, oxygen vacancies first increase and then decrease. After annealing for 1 h, the ITO films were found to have the lowest resistivity (6 × 10 -4 Ω · cm) and high mean optical transmittance (93.2% over the visible spectrum).
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