Abstract:Indium tin oxide (ITO) thin films were deposited on glass substrates by ion beam sputter deposition method in three different deposition conditions [(i) oxygen (O2) flow rate varied from 0.05 to 0.20sccm at a fixed argon (1.65sccm) flow rate, (ii) Ar flow rate changed from 1.00 to 1.65sccm at a fixed O2 (0.05sccm) flow rate, and (iii) the variable parameter was the deposition time at fixed Ar (1.65sccm) and O2 (0.05sccm) flow rates]. (i) The X-ray diffraction (XRD) patterns show that the ITO films have a preferred orientation along (400) plane; the orientation of ITO film changes from (400) to (222) direction as the O2 flow rate is increased from 0.05 to 0.20sccm. The optical transmittance in the visible region increases with increasing O2 flow rate. The sheet resistance (Rs) of ITO films also increases with increasing O2 flow rate; it is attributed to the decrease of oxygen vacancies in the ITO film. (ii) The XRD patterns show that the ITO film has a strong preferred orientation along (222) direction. The optical transmittance in the visible spectral region increases with an increase in Ar flow rate. The Rs of ITO films increases with increasing Ar flow rate; it is attributed to the decrease of grain size in the films. (iii) A change in the preferred orientations of ITO films from (400) to (222) was observed with increasing film thickness from 314 to 661nm. The optical transmittance in the visible spectral region increases after annealing at 200°C. The Rs of ITO film decreases with the increase of film thickness.

Characteristics of Indium Tin Oxide Films Deposited by DC and RF Magnetron Sputtering

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Optimization Method For Transparent Conducting Oxide Films Prepared By Dc Magnetron Sputtering

Annealing Effect on ITO Films Prepared by DC Magnetron Sputtering

High quality ITO thin films grown by dc and RF sputtering without oxygen

Effect of Different Thermo-Treatment at Relatively Low Temperatures on the Properties of Indium‑tin-Oxide Thin Films

Characterization of nanocrystalline indium tin oxide thin films prepared by ion beam sputter deposition method

Effects of Air Annealing on the Structure, Resistivity, Infrared Emissivity and Transmission of Indium Tin Oxide Films

Effect of RF Sputtering Power and Deposition Time on Optical and Electrical Properties of Indium Tin Oxide Thin Film

Characteristics of Ion Beam Assisted ITO Thin Films Deposited by RF Magnetron Sputtering

Influence of Dc Power and Oxygen Partial Pressure on the Electrical and Optical Properties of Indium-Tin-oxide Films

Electrical and optical properties of ITO thin films prepared by DC magnetron sputtering for low-emitting coatings

Characteristics of Zirconium-Doped Indium Tin Oxide Thin Films Deposited by Magnetron Sputtering

Amorphous Indium Tin Oxide Films Deposited on Flexible Substrates by Facing Target Sputtering at Room Temperature

Effect of Thickness on Structure and Optoelectrical Properties of Ti Doped Indium Tin Oxide Thin Films Deposited by RF Magnetron Sputtering

Growth of Indium Tin Tantalum Oxides Films by Reactive Magnetron Sputtering

Study on the Preparation and Properties of Antireflective ITO Thin Films by Magnetron Sputtering

Effects of processing parameters on crystalline structure and optoelectronic behavior of DC sputtered ITO thin film

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive Dc Magnetron Sputtering with Different Targets

Study of ITO Thin Film Deposited on PTCDA by RF Magnetron Sputter

Preparation of Indium Tin Oxide Films by Radio Frequency Magnetron Sputtering under Low Vacuum Level