Abstract:The acquisition of reliable knowledge about the mechanism of short laser pulse interactions with semiconductor materials is an important step for high-tech technologies towards the development of new electronic devices, the functionalization of material surfaces with predesigned optical properties, and the manufacturing of nanorobots (such as nanoparticles) for bio-medical applications. The laser-induced nanostructuring of semiconductors, however, is a complex phenomenon with several interplaying processes occurring on a wide spatial and temporal scale. In this work, we apply the atomistic-continuum approach for modeling the interaction of an fs-laser pulse with a semiconductor target, using monolithic crystalline silicon (c-Si) and porous silicon (Si). This model addresses the kinetics of non-equilibrium laser-induced phase transitions with atomic resolution via molecular dynamics, whereas the effect of the laser-generated free carriers (electron-hole pairs) is accounted for via the dynamics of their density and temperature. The combined model was applied to study the microscopic mechanism of phase transitions during the laser-induced melting and ablation of monolithic crystalline (c-Si) and porous Si targets in a vacuum. The melting thresholds for the monolithic and porous targets were found to be 0.32 J/cm2 and 0.29 J/cm2, respectively. The limited heat conduction mechanism and the absence of internal stress accumulation were found to be involved in the processes responsible for the lowering of the melting threshold in the porous target. The results of this modeling were validated by comparing the melting thresholds obtained in the simulations to the experimental values. A difference in the mechanisms of ablation of the c-Si and porous Si targets was considered. Based on the simulation results, a prediction regarding the mechanism of the laser-assisted production of Si nanoparticles with the desired properties is drawn.

Numerical analysis of thermal effect of the combined laser on single crystal silicon

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Multi-Physics Coupling Simulation of Picosecond Pulsed Laser Ablation of Single-Crystal Silicon

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Thermal Damage of Monocrystalline Silicon Irradiated by Long Pulse Laser

Numerical Analysis of Ultrashort Pulse Laser-Induced Thermomechanical Response of Germanium Thin Films

Numerical simulation and validation of subsurface modification and crack formation induced by nanosecond-pulsed laser processing in monocrystalline silicon

A Hybrid Method for Integrated Atomistic-Continuum Simulation of Ultrashort-Pulsed Laser Interaction with Semiconductors

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Numerical investigation of heat transfer in ultrafast laser processing of silicon material

Modeling of Short-Pulse Laser Interactions with Monolithic and Porous Silicon Targets with an Atomistic-Continuum Approach

Single-pulse femtosecond laser ablation of monocrystalline silicon: A modeling and experimental study

Numerical Simulations of Germanium Nanofilm under Femtosecond Pulse Laser Heating

Study on thermal stress of the the fused silica irradiated by millisecond–nanosecond combined pulse laser

Experimental study of the damage morphology induced by the millisecond–nanosecond combined-pulse laser with different pulse delay on silicon

Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material

One-Step femtosecond laser irradiation of Single-Crystal Silicon: Evolution of Micro-Nano structures and damage investigation

Single-crystal silicon ablation with temporally delayed femtosecond laser double-pulse trains

Silicon wafer modification by laser interference

Thermal and non-thermal ablation mechanisms in crystalline silicon by femtosecond laser pulses: classical approach of the carrier density two temperature model

Energy Transfer Between Femtosecond Laser and Silicon Carbide