Silicon wafer modification by laser interference

Le Zhao,Zuobin Wang,Dapeng Wang,Ziang Zhang,Y. Yu,Zhankun Weng,Carsten R. Maple,Dayou Li,Yong Yue
DOI: https://doi.org/10.1109/NEMS.2013.6559942
2013-01-01
Abstract:This paper presents the study of silicon wafer modification by two-beam laser interference. In the work, two-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of gratings, and different laser faiences and pulses were applied to the process in the air. The results were obtained from single laser pulse exposures with the laser fiuences of 637mJ/cm2, 780mJ/cm2 and 1280mJ/cm2. The role of multiple laser pulses was also investigated. In the experiment, the laser wavelength was 1064nm, the pulse duration 7-9ns and the repetition rate 10Hz. The results indicate that the laser fiuence and number of pulses have to be properly selected for the fabrication of gratings using laser interference. © 2013 IEEE.
What problem does this paper attempt to address?