Abstract:Silicon carbide (SiC)-bonded diamond materials, comprising approximately 50% diamond by volume, represent innovative composites with exceptional mechanical and thermal properties, including high hardness, wear and corrosion resistance, and elevated thermal conductivity. Despite these advantageous properties, the machining of these composites presents formidable challenges due to their extremely high hardness. Grinding with diamond tools is commonly employed among the limited viable machining methods. However, the efficiency of this process is hindered by high grinding forces, elevated temperatures, and significantly high tool wear. Additionally, the surface integrity, form, and dimensional accuracy of the workpiece are compromised by the effects of tool wear and high cutting forces. To address these technological constraints in the grinding of SiC-bonded diamond materials, a laser-assisted grinding process has been developed. Ultra-short pulsed laser radiations were effectively utilized to induce material ablation with controlled structural damages, enhancing the productivity and efficiency of the grinding process through reduced grinding forces, temperatures, and tool wear. Furthermore, this study investigated the influence of grinding tools' specifications, design variations, and parameters on key aspects such as grinding forces, surface quality, and tool wear. Substantial reductions of up to 70% in tangential grinding forces, 83% in normal grinding forces, and a modest improvement in surface roughness achieved. The surface integrity analysis revealed a damage-free ground surface when utilizing laser assistance. Furthermore, there was a substantial enhancement in the grinding ratio (G-ratio), achieving an increase of up to 247%, concurrently with a noteworthy improvement in the actual removal depth, reaching up to 99%, when compared to conventional grinding processes. Compared to the utilized segmented metal bonded diamond grinding wheel, the vitrified bonded diamond grinding wheel induced lower grinding forces and higher actual removal rates.

Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties

Surface Modification of Single-Crystal Silicon by Hybrid Laser Treatment

Laser Assisted Surface Conditioning of a Residual Pattern on Single Crystal Silicon Induced by Ultra-Precision Cutting

Surface Refining by Laser Scanning on Silicon Wafers

High Efficiency Precision Grinding of Micro-structured SiC Surface Using Laser Micro-structured Coarse-Grain Diamond Grinding Wheel

Laser-assisted Grinding of Reaction-Bonded SiC

Experimental Investigation of the Machinability of Single Crystal Silicon in Laser-Assisted Diamond Cutting

Improved Machinability of Single Crystal Silicon by Applying In-Situ Laser-Vibration Hybrid Assisted Diamond Cutting

Laser-assisted surface grinding of innovative superhard SiC-bonded diamond (DSiC) materials

Grinding of silicon carbide for optical surface fabrication, Part 1: surface analysis

Analysis of Diamond Wheel Wear and Surface Integrity in Laser-Assisted Grinding of RB-SiC Ceramics

Surface Topography and Subsurface Structure Evolution in Laser Micro Polishing of Monocrystalline Silicon

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Materials removal mechanism of single crystalline SiC with laser-induced periodic surface structures (LIPSS)

Enhancing the Ductile Machinability of Single-Crystal Silicon by Laser-Assisted Diamond Cutting

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Experimental investigations on the laser-assisted machining of single crystal Si for optimal machining

High-Quality Grinding of Polycrystalline Silicon Carbide Spherical Surfaces

Mechanism analysis and process optimization of nanogrinding single-crystal SiC

Study on Laser-Assisted Dry Micro-Ground Surface of Difficult-to-cut Materials

Nanosecond Laser Irradiation Assisted Chemical Mechanical Polishing (CMP) Process for Promoting Material Removal of Single Crystal 4H-Sic