Top-emitting Organic Light-emitting Devices Based on Silicon Substrate

YANG Hui-shan,CHEN Shu-fen,WU Zhi-jun,ZHAO Yi,HOU Jing-ying,LIU Shi-yong

DOI: https://doi.org/10.3321/j.issn:1000-7032.2005.02.021

2005-01-01

Chinese Journal of Luminescence

Abstract:Top-emitting organic light-emitting devices (OLEDs) offer a feasible fabrication of OLED displays on opaque substrates, such as Si wafers and active-matrix backplanes with complicated pixel circuits of thin-film transistors and integrate circuit. In top-emitting OLEDs, high reflectivity of the bottom anode is essential for achieving high luminance efficiency. Among various metals, Ag has the highest reflectivity for visible light. However, it is generally not considered as an ideal hole-injecting anode for OLEDs due to its rather low work function, not matching well the ionization potentials of organic materials commonly used in OLEDs. In this letter, we report a top-emitting organic light-emitting device on silicon substrate with high luminance and current efficiency utilizing Ag as electrodes and ultrathin quinacridone(QAD) as emitting layer. Surface-modified Ag and thin Ag films act as anode. The luminance reaches 13 700 cd/m 2 at 10 V and the maximum current efficiency of the device using such electrode is 4.3 cd/A at 7 V, which is about twice times than those devices without QAD. The improved performance is owing to the characteristics of quinacridone, which accepts excitation energy from tris(8-hydroxyquinoline) aluminium via Fster mechanism.