Abstract:Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking optimization of synthesis conditions and slow experimental iteration rates. Here we report on high-throughput molecular beam epitaxy with rapid screening of synthesis conditions using a novel cyclical growth and in-situ etch method. This novel approach leverages sub-oxide desorption present during molecular beam epitaxy and as such should be broadly applicable to other material systems. As a proof of concept, this method is applied to rapidly investigate the growth space for the ternary alloy (InxGa1-x)2O3 on (010) oriented beta-Ga2O3 substrates using in-situ reflection high energy electron diffraction measurements. Two distinct growth regimes are identified and analyzed using machine learning image recognition algorithms, the first stabilizing a streaky 2x surface reconstruction typical of In-catalyzed beta-Ga2O3 growth, and the second exhibiting a spotty/faceted pattern typical of phase separation. Targeted growth of (InxGa1-x)2O3 is performed under conditions near the boundary of the two regimes resulting in a 980 nm thick epitaxial layer with In mole fraction up to 5.6%. The cyclical growth/etch method retains the ~1 nm surface roughness of the single crystal substrate, increases experimental throughput approximately 6x, and improves single crystal substrate utilization by >40x. The high-throughput MBE method enables rapid discovery of growth regimes for ultra-wide bandgap oxide alloys for power conversion devices operating with high efficiency at high voltages and temperatures, as well as optical devices such as ultraviolet photodetectors.

A Review on Physical and Chemical Studies of REBa2Cu3O7-δ/MgO Liquid Phase Epitaxy Growth in Initial Stage

A Study of Rheed Pattern from the Epitaxial Growth of Si-Ge Crystal

A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

Nucleation and Epitaxy Growth of High-Entropy REBa2Cu3O7-δ(RE=Y,Dy,Gd,Sm,Eu)thin Films by Metal Organic Deposition

Epitaxial Growth of Ga2O3: A Review

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

Atomic Scale Investigation on Precipitates and Defects of Mg–RE Alloys: A Review

Fabrication and Characterization for Single Crystal Substrates of YBa2Cu3O7 Δ and Related Materials

The Research on Growth of GaAs under the Monitoring of RHEED

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys

Anisotropic monolayer of ReX2 on Au foils for exploring abnormal growth behavior and electronic properties

Unraveling evolution of microstructural domains in the heteroepitaxy of β -Ga2O3 on sapphire

Study on Temperature Calibration and Surface Phase Transition of Gaas Crystal Substrate in Mbe Growth by Rheed Real-Time Monitoring

Epitaxial Growth of Large-Area and Highly Crystalline Anisotropic ReSe 2 Atomic Layer

Sustainable recycling for epitaxial growth of YBa2Cu3O7−δ cryomagnets: From discarded buffer-crystals to superior seeds

Nucleation and epitaxy growth of high-entropy REBa2Cu3O7– (RE= Y, Dy, Gd, Sm, Eu) thin films by metal organic deposition

Comprehensive study of epitaxial (Nd,Eu,Gd)Ba 2 Cu 3 O 7−δ films grown on textured templates

Systematic Studies on the Growth Process of Superconducting YBa2Cu3O7−δ and Bi2Sr2CuOy Thin Films by Scanning Tunneling Microscopy

Reflection High-Energy Electron Diffraction oscillations during epitaxial growth of artificially layered films of (BaCuOx)m /(CaCuO2)n

Systematic Investigation of the Growth Kinetics of Β -Ga2o3 Epilayer by Plasma Enhanced Chemical Vapor Deposition

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates