Fabrication and Characterization for Single Crystal Substrates of YBa2Cu3O7 Δ and Related Materials

H Zama,F Wang,S Koyama,X Yao,M Tagami,Y Shiohara,T Morishita
DOI: https://doi.org/10.1016/s0921-5107(96)01632-7
1996-01-01
Abstract:We have characterized oxide superconductor single crystal substrates for thin film processing, called ‘homoepitaxial growth’, which were fabricated from single crystals of YBa2Cu3O7 δ and 123-structure related materials such as YBa2 (Cu1 x Znx)3O7 δ and Pr1 + x Ba2 xCu3O7 δ grown by the pulling method. Those substrates have good crystallinity with a Zmin value of approximately 2%, evaluated by Rutherford backscattering spectrometry and good surface morphology with unit-cell steps observed by atomic force microscopy. Therefore, those substrates are necessary for completing fine processing, 123-structure pseudo-homoepitaxial growth, for device applications.
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