Surface Characterization of Yba2cu3ox(001) Single-Crystal Substrates for Homoepitaxial Growth

H Zama,FR Wang,S Koyama,Y Shiohara,T Morishita
DOI: https://doi.org/10.1143/jjap.35.l421
1996-01-01
Abstract:We have evaluated the properties of YBa2Cu3O x (001) single-crystal substrates with areas as large as 10×10 mm. They have good crystallinity with a χ min value of 1.8% determined by Rutherford backscattering spectrometry, grains with areas as large as 5×5 mm confirmed by X-ray topography, and excellent surface morphology with unit-cell steps which were observed by atomic force microscopy. However, approximately one unit-cell-thick degraded layer on the surface, which was observed by angle-resolved X-ray photoelectron spectroscopy, presents problems which must be resolved. These analyses indicate that YBa2Cu3O x single crystal grown by the pulling method is a promising substrate material for homoepitaxial growth.
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