Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Anisotropic monolayer of ReX2 on Au foils for exploring abnormal growth behavior and electronic properties

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Deeply Exploring Anisotropic Evolution Toward Large-Scale Growth of Monolayer ReS2.

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Epitaxial Growth of Large-Area and Highly Crystalline Anisotropic ReSe2 Atomic Layer

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Direct Synthesis and in Situ Characterization of Monolayer Parallelogrammic Rhenium Diselenide on Gold Foil

Highly Crystalline ReSe2 Atomic Layers Synthesized by Chemical Vapor Transport

Anisotropy of two-dimensional ReS2 and advances in its device application

Temperature-dependent Raman Spectroscopy Studies of the Interface Coupling Effect of Monolayer ReSe2 Single Crystals on Au Foils

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Controlled growth of large-area anisotropic ReS 2 atomic layer and its photodetector application.

Space-confined Growth of Monolayer ReSe2 under a Graphene Layer on Au Foils

Realizing the Intrinsic Anisotropic Growth of 1T′ ReS 2 on Selected Au(101) Substrate toward Large‐Scale Single Crystal Fabrication

Using in-plane anisotropy to engineer Janus monolayers of rhenium dichalcogenides

Synthesis of high-crystalline ReS2 monolayers by sodium-assisted chemical vapor deposition

Electronic and Optoelectronic Applications Based on ReS2

Synthesis of high-crystalline ReS<sub>2</sub> monolayers by sodium-assisted chemical vapor deposition

Controllable growth of 2D ReS 2 flakes and their surface Raman enhancement effects

Identifying the Non-Identical Outermost Selenium Atoms and Invariable Band Gaps Across the Grain Boundary of Anisotropic Rhenium Diselenide

Facile Growth of Large-Area and High-Quality Few-Layer ReS2 by Physical Vapour Deposition