A Technological Review of the Highly Efficient Heterojunction with Intrinsic Thin-layer (HIT)Solar Cells

Licheng HAO,Ming ZHANG,Wenchao CHEN,Xiaodong FENG
DOI: https://doi.org/10.11896/j.issn.1005-023X.2018.05.001
2018-01-01
Abstract:Heterojunction with intrinsic thin-layer (HIT)consist of thin amorphous silicon layers deposited on crystalline sili-con wafers,which forms a silicon heterojunction(SHJ)structure with the major advantages of full exploitation of the excellent passi-vation properties of a-Si:H films,and consequently,the energy conversion efficiencies higher than homogenous cells.The paper pro-vides an introduction on the development and the structure of the HIT solar cells,and a discussion upon the wafer layers,the a-Si (undoped/doped)layers,the TCO (transparent conducting oxides)films and the metal grid electrodes from the perspectives of fabri-cation processes,the principle of passivation,and the band gap.Finally a prospect on the future trends are also proposed.
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