Structure and electrical properties of titanium nitride thin films prepared by pulsed laser deposition at different pressures

Yuxiong LI,Zhanpeng SUI,Chengyan GU,Yigang CHEN,Chunping JIANG

DOI: https://doi.org/10.3969/j.issn.1001-9731.2018.06.033

2018-01-01

Abstract:Titanium nitride films were prepared by pulsed laser deposition with pure titanium nitride as the target on sapphire at 650 ℃ and at different nitrogen pressures of 1 Pa,2 Pa and 3 Pa.The effects of different nitrogen gas pressures on the growth quality and electrical properties of titanium nitride films were studied.The research finds that (111)-preferred orientation TiNx thin films of high quality with a dense surface morphology have been achieved at various nitrogen pressures.With increasing nitrogen pressure,the positions of the diffraction peaks of the TiNx films shift towards the higher angles,the ratio of N and Ti decreases,square resistance decreases and the minimum reflectivity of the TiNx films shifts towards shorter wavelengths.The result of the research shows that the chemical composition and metallic properties of titanium nitride films can be tuned by the varia-tion of the nitrogen pressure.