Fabrication and nonvolatile memory performance of patterned graphene∶polymer composite film

Chao-xing WU,Fu-shan LI,Tai-liang GUO
DOI: https://doi.org/10.3969/j.issn.1001-9731.2015.07.003
2015-01-01
Abstract:Resistance memory devices using patterned graphene∶polymer as active layerand with ITO (indium tin oxide)/graphene∶polymer/Al cross bar sandwich structure were fabricated by spin-coating,lithography and thermal evaporation.The patterned active layer was achieved by using photosensitive polymer as organic matrix. The graphene concentration was optimized to obtain the best rewritable nonvolatile memory effect.The mecha-nism for the resistance switch effect was also discussed.It was found that the device fabricated with the gra-phene concentration at 0.01wt% showed not only the best memory performance with a large on/off ratio of 8.9×10 3 ,but also satisfactory retention characteristics.Current-voltage analyswas suggests that it was the car-riers captured and released by graphene that lead to the resistance switch effect.
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