Effects of Process Parameters on the Microstructure and Properties of LaNiO3 Thin Films

ZHANG Cong-chun,YANG Chun-sheng,SHI Jin-chuan,DING Gui-fu
DOI: https://doi.org/10.3321/j.issn:1001-9731.2008.01.015
2008-01-01
Journal of Functional Biomaterials
Abstract:LaNiO3 thin films have been prepared by RF sputtering and then crystallized after post-annealing.The resistivity was characterized by four probe measurements.The influence of process parameters such as oxygen partial pressure,sputtering power and post-annealing on the microstructure and properties were investigated by XRD,ICP-AES,AFM respectively.It is found that the film was crystallized when annealing at 550℃,however,annealing at 700℃ produced better electrical properties and smooth surface.When the oxygen partial pressure is kept between 10% to 25%,the content ratio of La to Ni is of the stoichiometric composition.The resistivity increased with increasing oxygen partial pressure.
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