Development of GaN-Based Light Emitting Diodes Used in Visible Light Communication

Xinqian Huang,Ruohe Yao

DOI: https://doi.org/10.13922/j.cnki.cjovst.2016.10.09

2016-01-01

Abstract:The latest progress in design and fabrication of the GaN-based light emitting diodes used in visible light communication was tentatively discussed.Recently,extensive research efforts centered on the possible solutions of the two key limitations in development of light fidelity technology:one is the narrow modulation band-width,the other is the so-called "Efficiency Droop."The discussions focused on:i) the mechanismsresponsible for efficiencydroop and the solutions,including the optimization of the synthesis conditions and structures of the InGaN/GaN multiquantum-wells to effectively reduce the built-in field at the interface and to increase the hole-injection and internal quantum efficiencies at a large current;ii) possible measures to improve the modulation bandwidth of LEDs:such as the reduction of RC time constantinduced by junction capacitance and the decrease the spontaneous recombination lifetime.The development trends of GaN-based LED were also briefly discussed in a thought provoking way.