Abstract:Plasma immersion ion implantation is an effective surface modification technique. Unlike conventional beam-line ion implantation, it features ion acceleration/implantation through a plasma sheath in a pulsed mode and non-line-of-sight operation. Consequently, the shape of the sample voltage pulse, especially the finite rise time due to capacitance effects of the hardware, has a large influence on the energy spectra of the incident ions. In this article, we present a simple and effective analytical model to predict and calculate the energy distribution of the incident ions. The validity of the model is corroborated experimentally. Our results indicate that the ion energy distribution is determined by the ratio of the total pulse duration to the sample voltage rise time but independent of the plasma composition, ion species, and implantation voltage, subsequently leading to the simple analytical expressions. The ion energy spectrum has basically two superimposed components, a high-energy one for the majority of the ions implanted during the plateau region of the voltage pulse as well as a low-energy one encompassing ions implanted during the finite rise time of the voltage pulses. The lowest-energy component is attributed to a small initial expanding sheath obeying the Child-Langmuir law. Our model can also deal with broadening of the energy spectra due to molecular ions such as N2+ or O2+, in which case each implanted atom only carries a fraction (in this case, half) of the total acceleration energy.

Temporal Evolution in an Ion-matrix Sheath During Plasma Immersion Ion Implantation

Hybrid particle-in-cell (PIC) ions and Boltzmann electron distribution simulation of direct-current plasma immersion ion implantation into three-dimensional objects

2D Particle-in-cell Simulation of Plasma Immersion Ion Implantation and Dose Distribution

Modeling of incident particle energy distribution in plasma immersion ion implantation

High-voltage Glow Discharge Plasma Immersion Ion Implantation Assisted by Magnetic Field

Numerical Studies of Collisionless and Collisional Sheath Evolution in Plasma Source Ion Implantations

Development of a plasma immersion ion implanter for the surface treatment of metal components

Simulation of trench homogeneity in plasma immersion ion implantation

A hybrid model for simulation of secondary electron emission in plasma immersion ion implantation under different pulse rise time

Evaporation-Glow Discharge Hybrid Source for Plasma Immersion Ion Implantation

Novel Plasma Immersion Ion Implantation and Deposition Hardware and Technique Based on High Power Pulsed Magnetron Discharge

Theoretical Study on Dose Distributions of the Ball Bearing Treated by Plasma Immersion Ion Implantation

Study on the Treatment Capability of A Plasma-Based Ion Implanting Trench-Shaped Target

Effect of High-Frequency Short-Pulses Biasing on Macroparticle in Plasma Ion Implantation Systems

Simulation and Dose Uniformity Analysis of Plasma Based Ion Implantation

Distribution and evolution of thermal field formed by intense pulsed ion beam on thin metal target

Charging Effects on Temporal and Spatial Evolution of the Dusty Plasma Sheath in Plasma Source Ion Implantation

An All Solid-State Pulsed Power Generator for Plasma Immersion Ion Implantation (PIII)

Investigation Of Plasma Immersion Ion Implantation Of Nickel-Titanium Rod By Multiple-Grid Particle-In-Cell Simulation

Study of Intense Pulsed Energy Effects for High Power Pulsed Ionbeam Implantation

Computer-Simulations Of The Ion-Implantation Process In Layered Materials