Abstract:Revealing the regularities of interaction of accelerated ions with an irradiated material based on the Monte Carlo simulation contributes to the efficient application of focused ion beam technique in modern nanotechnologies. The correctness of the calculation results depends on the model chosen and the parameters determining the surface binding energy (SBE) of sputtered atoms. In this work, the SBE has been determined within the discrete–continuous model, which makes it possible to consider the formation of gallium precipitates during irradiation of a silicon substrate with gallium ions. To compare the simulation results with the experimental data on material sputtering by a focused ion beam, two types of rectangular boxes have been prepared. The structures of the first type were formed at the same dose, close to 5 × 10 17 cm –2 (corresponding to the steady-state sputtering regime), at accelerating voltages of 8, 16, and 30 kV. The structures of the second type were formed at an ion energy of 30 keV and doses of 2.5 × 10 16 , 5 × 10 16 , and 1 × 10 17 cm –2 . The box cross sections were investigated by transmission electron microscopy. The sputtering yield and depth distribution profiles of gallium atoms, calculated in the SDTrimSP 5.07 software package, were compared with the experimental data using the R factor. Two sets of values have been established for the variable parameters: the SBE of gallium atoms and the α 1 parameter of the discrete–continuous model. The first set describes the experimental data with acceptable accuracy for a small number of implanted gallium atoms, which is implemented for low ion doses, as well as for a beam energy of 8 keV and a dose of 5 × 10 17 cm –2 . The second set is optimal for describing the ion beam interaction with the substrate at ion energies of 16 and 30 keV under steady sputtering conditions.

Simulation of trench homogeneity in plasma immersion ion implantation

Simulation and Dose Uniformity Analysis of Plasma Based Ion Implantation

Study on the Treatment Capability of A Plasma-Based Ion Implanting Trench-Shaped Target

Modeling of incident particle energy distribution in plasma immersion ion implantation

2D Particle-in-cell Simulation of Plasma Immersion Ion Implantation and Dose Distribution

Hybrid particle-in-cell (PIC) ions and Boltzmann electron distribution simulation of direct-current plasma immersion ion implantation into three-dimensional objects

A hybrid model for simulation of secondary electron emission in plasma immersion ion implantation under different pulse rise time

Numerical Studies of Collisionless and Collisional Sheath Evolution in Plasma Source Ion Implantations

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Three-dimensional simulations of ion dynamics in the plasma of an Electron Cyclotron Resonance Ion Source

Particle simulation of collision dynamics for ion beam injection into a rarefied gas

Particle-based simulation of atom and ion transport in HiPIMS: effect of the plasma potential distribution on the ionized flux fraction

Investigation Of Plasma Immersion Ion Implantation Of Nickel-Titanium Rod By Multiple-Grid Particle-In-Cell Simulation

Theoretical Study on Dose Distributions of the Ball Bearing Treated by Plasma Immersion Ion Implantation

Effect of High-Frequency Short-Pulses Biasing on Macroparticle in Plasma Ion Implantation Systems

Measured and Calculated Retained Dose with Different Process Parameters in Plasma Based Ion Implantation

Multi-physics modeling of the long-term evolution of helium plasma exposed surfaces

Computer-Simulations Of The Ion-Implantation Process In Layered Materials

Development of a plasma immersion ion implanter for the surface treatment of metal components

Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate

Feature Scale Simulation of PECVD of SiO2 in SiH4/N2O Mixture