Abstract:Summary form only given. Plasma ion implantation - deposition in an immersion configuration possesses excellent prospects in industrial applications. The biggest advantage is to treat objects with an irregular shape without complicated target manipulation or beam scanning. Experimental results have demonstrated its effectiveness to treat various types of conducting or semiconducting materials. However, the implantation dynamics of non-conducting materials is quite different due to the sample charging. When insulating samples are being implanted, the ion bombarding energy may diminish substantially due to capacitance effects. Our investigation shows that when charging occurs, the potential on the insulator surface decreases very quickly beginning at the initial time stage. The potential decreases gradually and slowly during the pulse plateau. The non-uniformity of surface potential on the target surface consisting of both the insulating sample and target holder distorts the plasma sheath in the vicinity and the implantation dynamics is consequently altered. We have conducted numerical simulation to investigate the different potential distributions for an insulating sample on a conducting target holder. A two-dimensional particle-in-cell (PIC) program is used in the work. The simulation conditions are: bias potential V/sub applied/ = -40kV, plasma density n = 3/spl times/10/sup 9/ cm/sup -3/, and electron temperature T/sub e/ = 4eV. The surface potential on the sample is assumed to be 0, 115, 3/5 and 5/5 of the applied bias, respectively. Our simulation results indicate that the plasma sheath configuration changes considerably and a low potential in the central zone leads to a lower ion dose. However, ion concentration happens within the rounded zone between the insulator and target edge.

Numerical Studies of Collisionless and Collisional Sheath Evolution in Plasma Source Ion Implantations

Numerical Simulation of Plasma Sheath of Non-Uniformly Biased Target in Plasma Ion Implantation

Numerical Simulation of Weakly Ionized Dynamic Plasma for Reentry Vehicles

Sheath Expansion Dynamics During Plasma Implantation of Insulating Materials

Analysis of Weakly Ionized Ablation Plasma Flows for a Hypersonic Vehicle

Effect of pulse waveform on plasma sheath expansion in plasma-based ion implantation

2D Particle-in-cell Simulation of Plasma Immersion Ion Implantation and Dose Distribution

Simulation and Dose Uniformity Analysis of Plasma Based Ion Implantation

Particle-in-cell Numerical Simulation of Non-Uniform Plasma Immersion Ion Implantation

Modeling of incident particle energy distribution in plasma immersion ion implantation

Sheath Sealing in Plasma Immersion Ion Implantation of Spherical Target

Simulation of A Diamond-Shaped Target with Different Sizes in Plasma Based Ion Implantation

Temporal Evolution in an Ion-matrix Sheath During Plasma Immersion Ion Implantation

Effect of rise-time patterns on dynamics of sheath expansion during plasma immersion ion implantation

Properties of collisional plasma sheath with ionization source term and two-temperature electrons in an oblique magnetic field

Numerical Simulation of Plasma Immersion Ion Implantation for Cubic Target with Finite Length Using Three-Dimensional Particle-In-Cell Model

Simulation of temperature distribution on a spherical target during plasma immersion ion implantation

Dynamical Simulation of Modification of Inner Surfaces of Square Tubes by Plasma Ion Implantation

Plasma-sheath Expansion During Plasma Immersion Ion Implantation of Insulating Materials

Numerical Research on Plasma Generation and Expansion into Vacuum

Particle simulation of collision dynamics for ion beam injection into a rarefied gas