A Shear Modified GTN Model Based on Stress Degradation Method for Predicting Ductile Fracture
Fanlei Min,Kunyuan Gao,Xiaojun Zhang,Wu Wei,Peng Qi,Xiaolan Wu,Shengping Wen,Hui Huang,Zuoren Nie,Dejing Zhou
DOI: https://doi.org/10.1088/1361-651x/acf8e0
IF: 2.421
2023-01-01
Modelling and Simulation in Materials Science and Engineering
Abstract:The Gurson-Tvergaard-Needleman (GTN) model has provided a powerful description of the nucleation growth and coalescence of micro voids, but it has limitations in simulating shear fracture due to the absence of a description of shear localization behavior. A shear improvement method is proposed for simulating the ductile fracture of materials under different stress states. The modified model not only allows for strain hardening of the matrix material, but also accounts for the stress degradation caused by shear. The strength equation of the material is described by both the shear stress state function and a decay function, making it easier for materials under shear stress state to experience material softening and further inducing shear fracture. The modified GTN model is developed by incorporating the shear stress degradation factor into the yield function, while taking into account both void growth and shear failure mechanisms. By carefully calibrating the model's parameters, the deformation and fracture processes of tensile, plane strain, notch tensile, and compression specimens in the 7A52 aluminum alloy are simulated. The damage evolution behavior of the material under different stress states is analyzed. The results indicate that the damage include void growth mechanism and void shear mechanism. The proportions of these two mechanisms vary under different levels of stress triaxiality. Upon localizing material deformation, the shear stress state intensifies, and the shear damage mechanism assumes a critical role in fracture. The modified GTN model accurately predicts the load-displacement response and fracture path of the 7A52 aluminum alloy under a wide range of stress states.