Characterization Methods of Relative Permittivity of Silicon-Based Passive Components Dielectric Thin Film

WANG Xiaolei,MA Ding,QIN Zhen,CHEN Wenbin,YANG Daoguo,CAI Miao
DOI: https://doi.org/10.14106/j.cnki.1001-2028.2017.08.011
2017-01-01
Abstract:The relative permittivity of dielectric thin film is one of the most important characterization parameters.It's necessary to verify the accuracy of characterization by known material,usually silicon dioxide,before characterizing the unknown material.Two groups of experimental S-parameter dates with different lengths for silicon-based coplanar waveguide transmission lines were extracted.Three different characterization methods based on conformal mapping were used.At first,the effective dielectric constant of the device and the structure parameters were get,and then,precisely characterize the relative permittivity of dielectric thin film.The result shows that the average deviations of the S21 method,single-line method and double-line method are about 1.435%,0.483% and 0.448%.Thus,the conclusion can be made that the characterization is accurate enough by these three methods.
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