Abstract:A modified sol-gel process for lead zirconate titanate (PZT) thin film deposition has been presented to overcome the problems of film cracking, short-circuiting and diffusion of PZT to substrate. In the modified sol-gel process, we pattern the pyrolyzed PZT thin film by wet etching before every treatment of post-annealing for crystallization. The modification brings two advantages: film cracking is eliminated due to the reduction of internal stress; PZT diffusion to substrate is avoided due to removing PZT film from the areas without Pt buffer layer before high-temperature post-annealing treatment. The modified sol-gel process is applied to fabrication of piezoelectric cantilever, which includes sputtering and patterning top and bottom electrodes, depositing PZT layer by the modified sol-gel process and releasing cantilever structure by a double side deep reaction ion etching process. After the fabrication, performances of PZT thin film such as hysteresis loop upon polarization and X-ray diffraction pattern are evaluated. Finally, resonant frequency is measured for the fabricated piezoelectric cantilever to verify its self-exited capability for future applications as micro sensors or actuators. These experimental results indicate that the modified sol-gel process for PZT deposition can greatly improve quality and yield rate of the fabrication of piezoelectric devices without causing any adverse effect.

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