Abstract:Single crystals of Hg0.89Mn0.11Te have been successfully grown by vertical Bridgman method at the optimized growth conditions. The X-ray rocking curve shows that the as-grown Hg1−xMnxTe possesses high perfection. Hall measurement data suggest that the electronic properties of as-grown wafers satisfy the requirement of detector manufacture. The resistivity and magnetization of the crystal were also measured by the superconducting quantum interference device (SQUID) magnetometer in the temperature ranges 5–80 and 5–300 K, respectively. The applied magnetic fields were 8.0×105, 1.6×106, 3.2×106, and 5.2×106 A m−1 for the resistivity measurements, and 8.0×103 A m−1 for magnetization measurement. The results of reciprocal susceptibility versus temperature fit Curie–Weiss law very well at the temperatures above 40 K, but deviate from the law in the range 5–40 K, which shows that the crystal possesses paramagnetic properties in the temperature range, and the paramagnetism of the crystal enhances in the lower temperature range below 40 K. The resistivity decreases with an increase of applied magnetic field in the extrinsic conduction region (T>20 K) due to the decrease of the ionization energy ε1. In the hopping conduction region (T<20 K), the increased spatial extent of the acceptor wave function under magnetic field leads to impurity conduction, therefore, the difference of resistivity under different magnetic fields increases rapidly with decreasing temperature, and the difference of that under zero magnetic field and 5.2×106 A m−1 is more than 3 orders of magnitude at 5 K.

The Observation of First-to-Freeze Point During Brigdman Growth of HgCdTe Crystal

Effects of Growth Speed on Shape of Solid-Liquid Interface During Modified-Bridgman Growth of HgCdTe

The Concentration Distribution and X-Ray Measurement of Nearby the Cd1 -xZnxTe Solid-liquid Interface

Vertical Gradient Freezing Growth of HgCdTe

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Characterization of Hgmnte Crystals Grown by Vertical Bridgman Method

Interpretation of the vacancy-ordering controlled growth morphology of Hg5In2Te8 precipitates in Hg3In2Te6 single crystals by TEM observation and crystallographic calculation

On the morphology and crystallography of Hg 5 In 2 Te 8 precipitation in Hg 3 In 2 Te 6

Growth of Large Diameter (φ40mm) HgCdTe Crystal By Pressure-Modified Bridgman Method

A Two-Stage Technique for Single Crystal Growth of HgCdTe Using a Pressurized Bridgman Method

Observations On Nanoscale Te Precipitates In Cdznte Crystals Grown By The Traveling Heater Method Using High Resolution Transmission Electron Microscopy

Solute redistribution during Bridgman single crystal growth of Hg1-x-CdxTe and its restriction on the growth rate

Solute Redistribution During ACRT-B Growth of HgCdTe

Concentration of extended defects in CdZnTe single crystals: Effects of cooling rate after growth

Investigation about Elliptical Region Observed on CdZnTe Wafers after Etching Treatment

Growth and Properties of 40mm Diameter Hg1−xCdxTe Using the Two- Stage Pressurised Bridgman Method

REAL-TIME MONITORING OF GROWTH PARAMETERS OF MBE GROWN HgCdTe

The Investigation of Defects in Hgcdte Crystals Grown by Ssr Technique

Bulk Crystal Growth and Characterization of Hg3In2Te6

Investigation of effect of constitutional supercooling and solute segregation in CZT-LPVB with finite element analysis method

Observation of Te Inclusions in Cd1-yZ Nyte Crystal Wafer