Abstract:Semiconductors are promising in photoelectric and thermoelectric devices, for which the thermal transport properties are of particular interest. However, they have not been fully understood, especially when crystalline imperfections are present. Here, using cadmium telluride (CdTe) as an example, we illustrate how grain boundaries (GBs) affect the thermal transport properties of semiconductors. We develop a machine-learning force field from density functional theory calculations for predicting the lattice thermal conductivity (LTC) via equilibrium molecular dynamics simulations. The LTC of crystalline CdTe decreases with the relationship of κL∼1/T in the simulation temperature range of 300 – 900 K, in which the isotropic LTC decreases from 3.34 to 0.23 W/(m⋅K) due to the enhanced anharmonicity. More important, after introducing GBs, the LTC is suppressed in all directions, especially in the direction normal to the GB planes. More severe LTC suppression occurs in CdTe with Σ9 GB than that with Σ3 GB at 300 K, decreasing by 92.8% and 61.4% along the direction normal to the GB planes compared to the isotropic LTC of the crystalline CdTe, respectively. The decreased LTC is consistent with the weaker bonding near GB planes and lower shear modulus of the defective material. The analyses of the phonon dispersion curves, vibrational density of states, and phonon participation ratio indicate that the decreased LTC mainly arises from phonon scattering at GBs. Overall, our work highlights that GBs can greatly influence the LTC of semiconductors, thus providing a promising approach for thermal property design.

Solute redistribution during Bridgman single crystal growth of Hg1-x-CdxTe and its restriction on the growth rate

Vertical Bridgman seeded growth of Cd1-xZnxTe crystals

Effect of Te Doping on Superconductivity and Charge-Density Wave in Dichalcogenides 2H-Nbse2-xtex (X=0, 0.1, 0.2)

Thermodynamic Analysis of the Growth of Hg1−xCdxTe by MOCVD

Vertical Gradient Freezing Growth of HgCdTe

On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

Growth of High Purity CdTe Single Crystals by Vertical Zone Melting

Controlling Te inclusion during direct mixed solution growth of large size CdZnTe crystal

Grain Boundaries Induce Significant Decrease in Lattice Thermal Conductivity of CdTe

Te substitution effect in low-dimensional superconductor NbSe 2-xTex (x= 0,0.1,0.2)

The role of Ge vacancies and Sb doping in GeTe: A Comparative Study of Thermoelectric Transport Properties in Sb<sub>x</sub>Ge<sub>1-1.5x</sub>Te and Sb<sub>x</sub>Ge<sub>1-x</sub>Te Compounds

Determination of structural defects in Hg1-xCdxTe multilayer materials

Suppression of Melt Convection in a Proposed Bridgman Crystal Growth System

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy

Stable structure and effects of sulfur in CdTe/CdS heterojunctions

Numerical Simulation of CdTe Crystal Growth Using the Vertical Gradient Freeze Technique Assisted by Axial Low-Frequency Oscillations of the Melt

Role of threading dislocations on the growth of HgCdTe epilayers investigated using monochromatic X-ray Bragg diffraction imaging

Growth Of Different Crystals Using A Modified Bridgman System

Controllable Growth of Vertical Heterostructure GaTe(x)Se(1-x)/Si by Molecular Beam Epitaxy.