A computer simulation of crystal growth by the traveling-solvent method (TSM): pseudo-steady-state calculations
C W Lan,D T Yang
DOI: https://doi.org/10.1088/0965-0393/3/1/007
IF: 2.421
1995-01-01
Modelling and Simulation in Materials Science and Engineering
Abstract:A computer simulation is conducted to study single-crystal growth by the traveling-solvent method (TSM) using a pseudo-steady-state model. The model, which is governed by momentum, heat, and mass balances in the system, is solved by a finite-volume/Newton method. Flow patterns, temperature and solute distributions, and unknown melt/solid interfaces are calculated simultaneously. The model is mainly developed for binary compounds for which the solubility of solvent in solid materials is negligible. In such a system, an integrability condition, which results from an overall solvent balance, is required to ensure the unique solution of solute fields in the computation. Sample calculations are reported for CdTe, a II-VI-compound semiconductor, grown from Te solvent. Due to strong coupling of solute and temperature fields and fluid flow, as well as phase equilibrium, the effect of convection on the interface morphology and zone position is significant in such a system. Through computer simulation, the effects of some process parameters, including the growth speed, heater temperature, and initial solvent volume, on interface shapes, convective mass transfer, and constitutional supercooling at different degrees of convection are also demonstrated.
materials science, multidisciplinary,physics, applied