Electrical Properties of In2O3 /IGZO TFTs Prepared by Inkjet Printing

Liang Kun,Shao Shuangshuang,Luo Manman,Xie Jianjun,Zhao Jianwen,Cui Zheng

DOI: https://doi.org/10.13290/j.cnki.bdtjs.2019.05.005

2019-01-01

Abstract:Amorphous indium gallium zinc oxide (IGZO) films,indium oxide (In2O3) films and double-layer In2O3 /IGZO heterojunction channel films with improved performance were successfully fabricated by inkjet printing technology,and the physical and electrical properties of these films were investigated. The results show that the metal oxide films prepared by inkjet printing have high optical transmittance and low surface roughness; and the embedded In2O3 layer films can reduce the interface defects between IGZO and In2O3 and significantly improve the performance and bias stability of In2O3 /IGZO thin film transistors (TFTs). As the In content in IGZO thin films increases,the carrier concentration increases, and device mobility increases,but the energy barrier between In2O3 and IGZO decreases,which ultimately makes it difficult to control off-state current and threshold voltage. Therefore,tuning the In contents in metal oxide thin films is beneficial to obtain higher device performance of In2O3 /IGZO heterojunction channel TFTs.