Research Progress of Metal-Oxide Thin-Film Transistors Prepared by Solution Method

Baozai Wu,Rong Liao,Yurong Liu
DOI: https://doi.org/10.13290/j.cnki.bdtjs.2018.05.001
2018-01-01
Abstract:Due to the advantages of high mobility, visible light transparency, simple process and low temperature preparation, the metal-oxide thin-film transistor (MOTFT) is a very promising device in the fields of high-performance flat panel display, wearable flexible electronics and integrated sensor, etc. The research progress of MOTFTs prepared by solution method is reviewed. Firstly, the advantages of solution method to prepare MOTFTs compared with other methods are described, such as simple craft, low cost and easy doping. Then, the characteristics, advantages and disadvantages of dip coating, spraying, spin coating and printing process of MOTFTs are discussed. Furthermore, the electrical properties of MOTFTs prepared by using different solution processing techniques are compared. Finally, the existing problems of MOTFT prepared by solution method are pointed out, and the optimization methods for solution preparation of MOTFTs are discussed in detail from three aspects of active layer material and structure,gate dielectric layer material and interface, annealing and pretreatment.
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