Oxide Semiconductor Thin Film Transistor Device Print Fabrication Based on Solution Method

Zhong Yun-xiao,Xie Yu,Zhou Shang-xiong,Yuan Wei-jian,Shi Mu-yang,Yao Ri-hui,Ning Hong-long,Xu Miao,Wang Lei,Lan Lin-feng,Peng Jun-biao
DOI: https://doi.org/10.3788/yjyxs20173206.0443
2017-01-01
Abstract:In recent years, solution method for electronic device print fabrication has garnered increasing interest and attention due to their green, low-cost, simple process, flexible and good adaptive, particularly in high-performance oxide semiconductor thin film transistor in flat panel display and consumer electronics industries. This review reported latest progresses of print oxide semiconductor TFT including structure optimization, semiconductor layer material, electrode layer material, insulating layer material and associated precursor selection. The relationship between device stability and post-treatment is described clearly, and the key of performance promotion is found. Moreover, several personal insights on the existing challenges and future research direction of print oxide semiconductor TFT are considered based on current advances.
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