Low-cost/High-density High-speed Mix-signal Microsystem Integration

ZHAO Jing,Li Ze-hong,ZHANG Bo,Yang Bang-chao,ZHAI Xiang-kun

DOI: https://doi.org/10.3969/j.issn.1003-353x.2005.09.011

2004-01-01

Abstract:A double-sides layout, six layers laminated multichip model with full metal package ispresented for a 500MHz mix-signal microsystem integration. The transmission line is simulated bySpecctraQuest .

What problem does this paper attempt to address?

Design and Fabrication of a TR Microsystem in Ka Band with Si-Based 3D Heterogeneous Integration

Faxin Yu,Xi Guo,Siyuan Ma,Chenge Wang,Guangjian Feng,Zhiyu Wang

DOI: https://doi.org/10.1109/tcpmt.2024.3385319

2024-01-01

IEEE Transactions on Components Packaging and Manufacturing Technology

Abstract:This article demonstrated the design and fabrication of a transmitter and receiver (TR) microsystem in Ka-band based on silicon 3-D heterogeneous-integration (3D-HI). To achieve this microsystem, we proposed a novel silicon interposer with bonded metal on the redistribution layer (RDL), which solved the compatibility problem involved in eutectic bond and wirebond processes. A brand new temperature-gradient-free stacking method achieved by printing conductive adhesive bonding technology is also presented, which reduces the stacking temperature while introducing no extra temperature-gradient. Based on these technologies, a four-channels T/R microsystem with a 6-bit phase for both T/R channels, smaller than $9.5\times 9.8\times 2$ mm, lighter than 0.3 g and working at 33-35 GHz is fabricated, whose receive noise figure is lower than 5.7 dB and the maximum output power exceeds 25 dBm.
Logical Architecture Design of Integrated Electronic System with High Real-Time and Reliability in ZDPS-2 Pico-Satellite

SU Xing,WANG Hui-quan,JIN Zhong-he

DOI: https://doi.org/10.3785/j.issn.1008-973x.2017.03.027

2017-01-01

Abstract:As high-real-time and reliability was required in ZDPS-2,multiple exclusive DMA modules were designed to work in parallel way for effective communication between CPU and all the peripherals by 54 serial interfaces.Experiments show that the time consumption on 54 interfaces between CPU and peripherals is reduced from 565 ms to 50 ms,and the sampling time difference among all sensors of ADCS is reduced from 33 ms to 6 ms.Special frame structure and linked-list-based DMA modules can meet the real-time requirement of 84 distributed-payloads,the data sampling rate on 84 distributed-payloads reaches 100 Hz,and the transmitting latency to the ground is less than 40 ms.Radiation-hardened and fault-tolerant designs were also applied to improve the reliability.
Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Qun Jane Gu,Zhiwei Xu,Jenny Yi-Chun Liu

DOI: https://doi.org/10.1007/s10470-015-0500-8

IF: 1.321

2015-01-01

Analog Integrated Circuits and Signal Processing

Abstract:Deep-scaled CMOS technologies have provided ultra-high speed devices and enabled the possibility to achieve integrated millimeter wave and sub-millimeter wave systemon-a-chip (SoC). However, the drawbacks and constraints of deep-scaled technologies require not only creative circuit design ideas but also accurate active device models and optimum physical design. The paper presents a systematic design approach to optimize active device physical design and build the corresponding model, which is exemplified through two layout examples. With the optimum active device physical design and new circuit design ideas, we have successfully demonstrated several key circuits in mm-wave/sub-mm-wave frequency ranges: a 450 GHz voltage controlled oscillator, a 200 GHz frequency divider, and a 200 GHz amplifier all in 65 nm bulk CMOS technologies. The availability of these key building blocks would benefit the realization of mm-wave/sub-mm-wave SoCs in the future.
Three-dimensional circuit integration based on self-synchronized RF-interconnect using capacitive coupling

qun gu,zhiwei xu,jongsun kim,jenwei ko,mauchung frank chang

DOI: https://doi.org/10.1109/VLSIT.2004.1345414

2004-01-01

Abstract:A self-synchronized RF-interconnect (SSRFI), based on capacitive coupling and peak signal detection, is presented. In this SSRFI, small coupling capacitor (60fF) is used to interconnect vertical active layers in 3-Dimensional IC. The demonstrated SSRFI system, including both transmitter and receiver, has been designed, fabricated and verified in UMC 0.18 μm CMOS with a PRBS data rate of 3Gbit/s, a BER of 1.2×10-10 and a rms jitter of 1.28ps. The core circuit burns 4mW from a 1.8V supply and occupies 0.02mm2 chip area.
Multi-Chip 3D Integrated Micro-System Based on Microwave Multilayer

Cheng Yang,Zhenghu Zhu,Mengjie Hu,Chao Zhao,Long Xu

DOI: https://doi.org/10.1007/978-3-031-44947-5_95

2024-01-01

Abstract:3D integrated vertical interconnection technology is an effective way to realize miniaturization, lightweight and high integration of electronic RF system. This paper introduces and verifies a hybrid interconnection structure that combines multiple types of chip stacking and flip chip welding in detail. The vertical interconnection of multiple types of chips and substrates is realized through two assembly methods of lead bonding and flip chip bonding. Finally, multiple active chips and passive devices are high-density integrated in a 60 mm × 60 mm × 1.5 mm active link volume. Compared with the traditional 2D packaging structure, the hybrid interconnection structure can reduce the packaging volume by more than 40% and increase the interconnection density by more than 2 times, effectively meeting the target requirements of miniaturization, functional diversification and rapid response of electronic system equipment.
Novel Millimeter-Wave Power Combining Utilizing Wafer Level Packaging Technology

Yingqian Huang,Xinyi Hu,Jinfang Zhou,Zhiguo Shi,Kangsheng Chen

2011-01-01

Abstract:It is extremely difficult to obtain high output power with silicon based processes, which presents one of the greatest challenges for realizing fully integrated transceivers, especially at millimeter-wave frequencies. For this reason, various power combining methods have been proposed to achieve higher power levels.In this paper, a novel power combining method suitable for millimeter-wave applications is presented. The power combining network is synthesized in package utilizing wafer level packaging technology, with an array of power sources of moderate output power capability assumed to be distributed on chip, which means applying further combining in addition to existing on-chip power combining scheme for potentially even higher output power is possible.The power combining network is composed of more basic power combining units, each consisting of one substrate integrated waveguide (SIW) resonator coupling four lambda/4 standing-wave resonators, which can be synthesized using two quarter-wavelength vertical vias with one end open and the other end shorted. For power combining purpose, the open end of each lambda/4 resonator is connected to the differential output of one on-chip power source, while the shorted end is realized using one of the two metal plates of the SIW resonator. The coupling between the SIW resonator and lambda/4 resonators is through slotting on the metal plate to allow magnetic leakage so that oscillation in lambda/4 resonators will excite the SIW resonator to oscillate. As the quality factor of the SIW resonator is much larger than those of lambda/4 resonators, energy is mainly confined in the cavity of the SIW resonator so that power combing is achieved.Example design for 60 GHz application is detailed in the paper with simulation results using commercial CST software showing the effectiveness of the power combining method.
Heterogeneous Integration of Millimeter-wave Transceivers: Fabrication, Components and System

Si-Long Tang,Xi-Liang Cheng,Yu Chen,Xiao-Long Huang,Cheng-rui Zhang,Liang Zhou

DOI: https://doi.org/10.1109/icmmt45702.2019.8992126

2019-01-01

Abstract:This paper presents the design methodology of 3 dimensional heterogenous integrations of packaged transceiver. Low noise, power amplifier, two mixers are packaged. The packaged voltage-controlled oscillator and 1/4 quarter mode SIW filter as well as couplers are designed. The noise figure of the transceiver is about 4 dB with its gain 23 dB at 30 GHz, the output power is about 2 W. The proposed concept is attractive for designing miniaturized and high-performance three-dimensional millimeter wave transceiver systems.
Electronic-Photonic Integrated Circuit Design And Crosstalk Modeling For A High Density Multi-Lane Mzm Array

Pengfei Ji,Jing Gao,Wenyi Xu,Yanan Sun,Weifeng He,Hui Wu

DOI: https://doi.org/10.1109/ISCAS.2018.8351587

2018-01-01

Abstract:To meet the rapidly increasing bandwidth density demand in high-performance computers and data centers, the number of parallel lanes in a short-reach optical interconnect link is expected to increase by several folds. This paper presents a multi-lane traveling-wave Mach-Zehnder modulator (MZM) array design using silicon photonics technology. We treat the MZM as an electronic-photonic integrated circuit and adopt a newly developed multi-physics cross-layer design methodology. The design spans electrical/optical device modeling, electromagnetic simulation, and circuit analysis. The crosstalk issue within a closely-packed MZM array is investigated. The simulated 3-dB EO bandwidth of a single MZM is 17.5 GHz. The complete link considering crosstalk in the MZM array achieves BER< 1 x 10(-12) at 25 Gbps. A prototype chip with 4 MZMs is designed using IMEC 50G silicon photonics technology, saving significant chip area compared to conventional design.
Investigation Of A Unified Ltcc-Based Micromachining And Packaging Platform For High Density/Multifunctional Microsystem Integration

Min Miao,Yufeng Jin,Hua Gan,Jing Zhang,Yunsong Qiu,Yang Zhang,YangFei Zhang,Rui Cao,Zhensong Li,ZhengYi Wang,FangQing Mu,Chengchen Gao

DOI: https://doi.org/10.1109/ECTC.2012.6248858

2012-01-01

Abstract:3D system-in-package has recently been considered a major enabler for high density and heterogeneous microsystem integration. We hereby proposed the concept of a unified micromachining and packaging platform based on LTCC (low temperature cofired ceramic) material system and process, which is implemented by first enhancing an existing LTCC hybrid IC fabrication line and then integrating different LTCC micromachining process modules one by one. Hence, the unified process flow can be accomplished within just one single package-test house. The platform has been capable of micromachining basic 3D MEMS (micro electromechanical system) microstructures into LTCC laminates and using them as a packaging substrate for mounting IC/MEMS from other process platforms, realizing self-contained and versatile microsystems of high density. The 3D microstructures formation process consisting of green tape machining, lamination and cofiring are demonstrated. The designing, analysis and fabricated samples of various micro functional structure enabled by the platform are illustrated, including embedded cooling microchannels (capable of lowering substrate temperature by more than 50K), microaccelerometer for harsh environment, micro Pirani gauge for in-situ vacuum level monitoring and THz (tera hertz) vacuum microelectronic devices. Samples of overall packaged MEMS and IC chips with micromachined LTCC substrate are displayed, showing ultra-low leakage (< 5 x 10(-11) Pa . m(3)/s) vacuum packaging capability and significantly enhanced device performance. In addition, the platform has demonstrated the potential of stacking several laminates with mounted chips into a 3D frame-like microsystem. In comparison, 3D integration purely based on Si micromachining, e. g. anodic-bonding based in-situ wafer encapsulation, may only support a very limited spectrum of devices/materials and integration density and is somehow too expensive for many MEMS researchers.
Single Level Integrated Packaging Modules For High Performance Electronic Systems

Lr Zheng,H Tenhunen

DOI: https://doi.org/10.1109/6040.982833

2001-01-01

IEEE Transactions on Advanced Packaging

Abstract:In this paper, we studied a novel packaging scenario that aims to integrate or eliminate the existing multilevel packaging hierarchies toward single level integration. This new approach is an extension of VLSI technology where standard IC processes were pursued in the whole fabrication sequence. Main benefits include very high performance, ultra high density, mixed-signal integration, and inexpensive. Several key technologies such as chip assembly and planarization were developed. A feasible fabrication procedure for single level integration has been established. Demonstrating modules were presented. Interconnect structures, signal and power distribution, and electrical performance were studied theoretically and experimentally for GHz off-chip operating. Properties of signal propagation and coupling from chip to chip were investigated both in frequency domain and in time domain by simulations and by high frequency measurements. The studies show that the new modules are capable of several Gb/s/pin data rate for off-chip communications. Besides, some design guidelines for best performance are obtained through the work.
Design of Hybrid Free-Space Wavelength-Division Multiplexers for Integration

XG Deng,JY Yang,JZ Zou,RT Chen

DOI: https://doi.org/10.1117/12.469645

2002-01-01

Abstract:We design a hybrid free-space wavelength-division multiplexers (MUX) that favor integration of matured high performance grating-based MUX and planar waveguide devices. By optimizing the component interfaces, we pursuit a divide-and-conquer method in the proposed hybrid integration. Meanwhile, a novel 6-channel coarse MUX based on layered diffractive optics is successfully designed. These two methods combined are promising in integrating multiple optical functions with cost-effective mass production.
Novel millimeter wave power-combining system in 3-D packaging level

Xianfeng Wang,Zhiguo Shi,Kangsheng Chen

DOI: https://doi.org/10.1109/ICEPT.2010.5582839

2010-01-01

Abstract:This paper presents a novel millimeter wave power-combining system which can be fabricated with modern packaging technology and compatible with CMOS process. The system is comprised of a silicon integrated waveguide (SIW) resonator coupled with numerous λ/4 standing wave resonators, all of which can be fabricated by using via holes in 3-D packaging level. The coupling between the SIW resonator and the λ/4 standing wave resonators can be fabricated by eroding slots in the metal layer. An example system operating at 77GHz is illustrated and simulation results of electromagnetic field distribution in the SIW resonator and around the λ/4 standing wave resonators from professional electromagnetic simulation tool are presented. It is shown that the resonant frequency and phase of these λ/4 standing wave resonators are controlled by the SIW resonator and the power of all these λ/4 standing wave resonators can be combined in the SIW resonator. The SIW resonator operates in TE102 mode and has a quality factor of more than 500, which is much higher than that of each independent λ/4 standing wave resonators with quality factor of about 150. Thus the proposed power-combining system fabricated in packaging level can work effectively and features a lower loss and high quality factor.
220 GHz Multi Circuit Integrated Front End Based on Solid-State Circuits for High Speed Communication System

Niu Zhongqian,Zhang Bo,Dai Bingli,Zhang Jicong,Shen Fang,Hu Yi,Fan Yong,Zhang Yihan

DOI: https://doi.org/10.1049/cje.2021.00.295

IF: 1.019

2022-01-01

Chinese Journal of Electronics

Abstract:This paper presents the research on a 220 GHz multi circuit inte-grated front end based on solidstate circuits. This integrated front end integrates a 220 GHz subharmonic mixer, a 110 GHz tripler, a 110 GHz 8 d B hybrid coupler and a 220 GHz waveguide bandpass filter（BPF） in one single block. Compared to the traditional transceivers which usually use cascade connection of the independent mixers and multipliers, the size of the proposed multi circuit integrated front-end block is 25 mm × 20 mm × 20 mm, ten times smaller than the cascading transceiver. In order to check the tripler’s output power, a modified compact 110 GHz 8 d B hybrid coupler is set between mixer and tripler. Due to the characteristics of the hybrid coupler, the deterioration of cascading transceiver’s performance caused by mismatch has also been improved. In addition, to achieve single sideband（SSB） communication, a 220 GHz BPF with high selectivity is integrated in the circuit. The measured conversion loss of the fabricated multi circuit integrated front end is less than 11 d B, where the LO and RF frequency are 37 and 210-220 GHz. Based on this front-end, a 220 GHz high speed communication system has been setup and it can achieve 10 Gbps data transmission using 16 QAM modulation.
Design And Implementation Of A Compact Dual-Band Rf System-In-Package Module

Ming Liu,Xiaozheng Liu,Zhixian Min,Bowen Wu,Zongming Duan

DOI: https://doi.org/10.1109/ICMMT49418.2020.9386943

2020-01-01

Abstract:This paper presents design and implementation of a compact dual-band RF system-in-package (SiP) module for radar applications. Four S-band transceivers and one P-band transceiver are integrated in this module to realize four-channel radar front end integration. Multi-layer High-Temperature Co-fired Ceramic (HTCC) substrate with metal enclosure on the top side and Ball Grid Array (BGA) on the bottom side is adopted to achieve high RF performance and reliability. With 13 active chips and 50 passive components integrated in the HTCC substrate, the SiP achieves a compact size of 20x25x4.6 mm(3) and a small weight of 7g. Design techniques of metal crossers, via barriers and coaxial-via structures are introduced to improve channel-to-channel isolation to 120 dB in S-band. The simulated results show that the SIP achieves low DC voltage drop and good thermal performance.
Design and Implementation of a Dual-Band RF SiP Module Based on Package-on-Package Technology

Bozheng Wang,Yangjun Zhou,Q. Ma,Lijie Chen,Jianfeng Liu,Zongming Duan

DOI: https://doi.org/10.1109/ICMMT.2018.8563973

2018-05-01

Abstract:This paper presents design and implementation of a dual-band RF system-in-package (SiP) module for radar application. Four channel RF transceivers, each of which consists of dual-band RF front-end, ADC and DAC, are integrated in this SiP module. S and P band RF front-end of the transceiver employ common Intermediate Frequency (IF) window to share digitization circuits efficiently. To achieve more miniaturized package level of SiP, Package-on-Package technology is adopted and realized by stacking two multi-layer organic substrates vertically, which interconnected by Through Mold Via (TMV) and BGA. Dual-band RF front-end is mounted on the top RO4350B substrate, and four-channel ADC and DAC are molding on the bottom BT substrate. With the integration of 50 chips and 251 passive components, this SiP module retains small form factor and measures $\pmb{3.8\times 4\times 0.4}\mathbf{cm}^{\pmb{3}}$. The simulation results show that the insertion loss of RF transmission paths are better than 0.4 dB with 60 dB channel isolation, the crosstalk between analog and digital paths is less than -60 dB, and each chip junction temperature is below 100°C in the condition of full load. The above evaluation indicates that the proposed RF SiP module can achieve the optimization of electrical performance, reliability and miniaturization simultaneously.

Physics,Engineering
Design and Realization of a 2 GHz Downconversion Mixer

LIU Lu,WANG Zhi-hua

DOI: https://doi.org/10.3969/j.issn.1004-3365.2005.06.016

IF: 1.992

2005-01-01

Microelectronics Journal

Abstract:A 2-GHz downconversion CMOS mixer is designed and realized.The circuit is simulated with models of bonding wire,pad and ESD circuits.Methods to reduce interference induced by high frequency signals during circuit and layout design are presented.Test results show that this mixer achieves a conversion gain of 0.6 dB,an IIP3 of 6 dBm,and a noise figure of 18.7 dB.
Design and Realization of Multi-Channel and High-Bandwidth 2.5D Transmitter Integrated With Silicon Photonic MZM

Huimin He,Haiyun Xue,Yu Sun,Fengman Liu,Liqiang Cao

DOI: https://doi.org/10.1109/jlt.2022.3175518

IF: 4.7

2022-08-01

Journal of Lightwave Technology

Abstract:Recently, the interconnection bandwidth of the data center is rapidly increasing. To satisfy the requirement for the high-performance data center, a 4-channel 2.5D silicon photonic transmitter is proposed and the packaging structure could increase the high-density scalability of the architecture for 1.6T3.2T co-packaging optics (CPO) module. The electrical driver and silicon photonic Mach-Zehnder modulator (MZM) are mounted to the silicon interposer by the micro-bumps. Meanwhile, the silicon interposer is mounted to the low temperature co-fired ceramic by the solder balls. The 2.5D transmitter is assembled to the motherboard by the high-speed ball grid array (BGA) connector to make it convenient to be replaced. The electrical optimization is implemented to make the insertion loss of the whole passive link within 1.55 dB under 40 GHz, which ensures the transmitter with the socket transmit the clear simulated eye diagram at 64 Gbps PAM4 rate per channel. Moreover, the thermal evaluation is performed, which includes the heat- dissipation evaluation and the thermal-induced impact on the edge light coupling. Finally, the substrates in the 2.5D transmitter are fabricated and the transmitter is realized by the improved assembly method. By the verification of the measurement, the 2.5D transmitter we proposed could work at 64 Gbps PAM4 signal transmission rate per channel with the 6pJbit power consumption. Regardless of the bandwidth of the electronic integrated circuit (EIC)MZM and the BGA connector, based on the simulation electrical bandwidth, it is potential for realizing 100 Gbps PAM4 signal transmission.

engineering, electrical & electronic,optics,telecommunications
Multi-channel signal processing heterogeneous microsystem based on FPGA and Application Processor

Fan Chang,Jun Cheng,Jianling Yang,Hanting Huang,Kuizhi Mei

DOI: https://doi.org/10.1109/ICSICT49897.2020.9278292

2020-01-01

Abstract:For multi-channel signals with a wide range of amplitude and frequency, a real-time, high-speed digital heterogeneous microsystem is proposed in this work based on FPGA and application processor, with both time and frequency domain processing capabilities, while the size is only 16.2cm *14.4cm. The system can provide real-time time and frequency domain data to the application processor unit(APU) in the form of interruption or query. The system uses serial peripheral interface(SPI) to communicate with analog-to-digital converter(ADC) and enhanced local bus controller(eLBC) to communicate with APU to achieve high-speed data transmission between different modules. Windowing fast Fourier transform(FFT) is used in this system, which improves the accuracy of the single frequency signal. A specially designed ping-pong buffer is used in the system so that the data can be accessed by the APU at any time. The file system acceleration is proposed to speed up data storage. The system can achieve real-time, high-speed multi-channel discrete signal common mode detection and DC blocking, preprocessing, windowing FFT, data storage. Experimental results show the bandwidth between FPGA and APU can reach 66Mb/s. And files writing speed can reach 1.07MB/s. For signals in the range of 100HZ~9 KHz, the acquiring and processing error is within 4.5%.
Blueprint and integration of vastly efficient 802.11A WLAN front-end

Yasar Amin,Hannu Tenhunen,Li-Rong Zheng

2006-01-01

Abstract:Next generation wireless communications terminals will demand the use of advanced component integration processes and high density packaging technologies in order to reduce size and to increase performance. This paper presents high density multilayer interconnects and integrated passives used to design high performance prototype filter for 5GHz wireless LAN receiver realized on MCM-D substrate. The thin film implementation of Multichip Module technology is identified as a useful platform for the integration of GaAs MMIC and silicon device technologies for microwave applications where performance, size and weight are critical factors. The ability of the MCM-D technology to provide controlled impedance, microstrip structures and integrated thin film passive components with useful performance in the microwave frequency regime has now been demonstrated.
Case Study of Cost and Performance Trade-off Analysis for Mixed-Signal Integration in System-on-chip

MG Shen,LR Zheng,H Tenhunen

DOI: https://doi.org/10.1109/iscas.2003.1206380

2003-01-01

Abstract:Owing to the rapid progress in submicron CMOS technology analog/RF circuitry, memory can be integrated into the same chip together with the digital circuitry. However, such an integration scenario also means extra costs for mixed signal isolation and technology fusion. In this paper, we analyze cost and performance trade-offs for mixed-signal integration in system-on-chip through case studies of wireless system integration. It is shown that, depending on system complexity, integration scale, and mixed-signal performance requirements, single chip integration is not necessarily better for some systems in term of implementation cost. The analysis method emphasizes a priori estimation, and hence is useful for addressing implementation issues at early conceptual-level design phases.

Low-cost/High-density High-speed Mix-signal Microsystem Integration

Design and Fabrication of a TR Microsystem in Ka Band with Si-Based 3D Heterogeneous Integration

Logical Architecture Design of Integrated Electronic System with High Real-Time and Reliability in ZDPS-2 Pico-Satellite

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Three-dimensional circuit integration based on self-synchronized RF-interconnect using capacitive coupling

Multi-Chip 3D Integrated Micro-System Based on Microwave Multilayer

Novel Millimeter-Wave Power Combining Utilizing Wafer Level Packaging Technology

Heterogeneous Integration of Millimeter-wave Transceivers: Fabrication, Components and System

Electronic-Photonic Integrated Circuit Design And Crosstalk Modeling For A High Density Multi-Lane Mzm Array

Investigation Of A Unified Ltcc-Based Micromachining And Packaging Platform For High Density/Multifunctional Microsystem Integration

Single Level Integrated Packaging Modules For High Performance Electronic Systems

Design of Hybrid Free-Space Wavelength-Division Multiplexers for Integration

Novel millimeter wave power-combining system in 3-D packaging level

220 GHz Multi Circuit Integrated Front End Based on Solid-State Circuits for High Speed Communication System

Design And Implementation Of A Compact Dual-Band Rf System-In-Package Module

Design and Implementation of a Dual-Band RF SiP Module Based on Package-on-Package Technology

Design and Realization of a 2 GHz Downconversion Mixer

Design and Realization of Multi-Channel and High-Bandwidth 2.5D Transmitter Integrated With Silicon Photonic MZM

Multi-channel signal processing heterogeneous microsystem based on FPGA and Application Processor

Blueprint and integration of vastly efficient 802.11A WLAN front-end

Case Study of Cost and Performance Trade-off Analysis for Mixed-Signal Integration in System-on-chip