Rational band engineering and structural manipulations inducing high thermoelectric performance in n-type CoSb3 thin films
Zhuang-Hao Zheng,Xiao-Lei Shi,Dong-Wei Ao,Wei-Di Liu,Yue-Xing Chen,Fu Li,Shuo Chen,Xiao-Qing Tian,Xin-Ru Li,Jing-Yi Duan,Hong-Li Ma,Xiang-Hua Zhang,Guang-Xing Liang,Ping Fan,Zhi-Gang Chen
DOI: https://doi.org/10.1016/j.nanoen.2020.105683
IF: 17.6
2021-03-01
Nano Energy
Abstract:<p>Owing to the earth-abundancy, eco-friendliness and high thermoelectric performance, CoSb<sub>3</sub> skutterudites have been employed in thermoelectric devices with a high energy conversion efficiency. However, the thermoelectric performance of CoSb<sub>3</sub>-based thin films is still relatively low within the medium temperature range. In this work, we report a record high <em>ZT</em> of ~0.65 at 623 K in the n-type Ag/In co-doped CoSb<sub>3</sub> thin films, fabricated by a facile magnetron sputtering technique. Extensive characterizations and computational results indicate both Ag and In as fillers prefer to occupy the interstitial sites in the CoSb<sub>3</sub> lattice. A 0.2% Ag doping induces impurity states in the band structure of CoSb<sub>3</sub>, boosts the density-of-states near the Fermi level and enhances the absolute Seebeck coefficient up to ~198 μV K<sup>-1</sup>. Simultaneously, a 4.2% In doping further tunes the bandgap, increases the electrical conductivity up to ~75 S cm<sup>-1</sup>, and contributes to an optimized power factor of ~2.94 μW cm<sup>-1</sup> K<sup>-2</sup> at 623 K. In addition, these interstitial dopants accompanying with dense grain boundaries contribute an ultra-low thermal conductivity of ~0.28 W m<sup>-1</sup> K<sup>-1</sup> at 623 K, leading to a high <em>ZT</em> in the film system. This work demonstrates that rational band engineering and structural manipulations can achieve high performance in n-type CoSb<sub>3</sub>-based thin films, which possess full potential for applying to miniature thermoelectric devices.</p>
materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology