Abstract:The treatment capability of a plasma based ion implanting two-dimensional trench-shaped target has been discussed through particle-in-cell simulation. By analysing time-dependent expansion of the plasma sheath and the ion implantation parameters during a high voltage pulse, we found that the sidewall of the trench could not be implanted effectively. Trenches with the same depth and three different widths were simulated in this paper. Simulation results show that the plasma sheath conforms to the target better in the case of a wider trench, but it tends to expand as a plane for the majority of the pulse. The ions accelerated in such a sheath would impinge vertically on the upper surface and the bottom of the trench with the converging at the convex corner and diverging at the concave corner, but neglecting the sidewall. After the short initial stage of the pulse when the sheath is conformal to the target well (about 1/10 of the pulse duration), the ions impact the sidewall of the trench with grazing angle, lowest ion impact current, and lowest ion impact energy. All the above three factors would induce a severe sputtering effect, reduce ion implantation depth and decrease retained dose. Increasing the width of the trench would alleviate this effect, but to a slight extent. The plasma based ion implantation process in trench cases is similar to ion beam implantation with a large beam and would not get the effective implantation for all the surfaces of the trench.

Design of the Air Chamber Placed in Vacuum

Design of Ionization Chamber for CLAPA II

An ionization chamber developed for the facility of heavy ions therapy at IMP

Study on the Treatment Capability of A Plasma-Based Ion Implanting Trench-Shaped Target

Measured and Calculated Retained Dose with Different Process Parameters in Plasma Based Ion Implantation

Implementation of a Miniaturized Cylindrical Anechoic Chamber Based on an Angle-dependent PML Surface

Measurement and Simulation of Ultra-Low-Energy Ion-Solid Interaction Dynamics

Development of Ceramic Vacuum Chambers and Their Impedance Measurement

Design of an Apparatus of Laser Irradiation Therapy in Cavities

Study and Development of RFQ at Peking University

Design and application of an efficient scheme for wafer transfer procedure during ion implantation process

Hybrid particle-in-cell (PIC) ions and Boltzmann electron distribution simulation of direct-current plasma immersion ion implantation into three-dimensional objects

The development of a portable ultrahigh vacuum chamber via silicon block

An initial design of hohlraum driven by a shaped laser pulse

Implementation of Various Vacuum Conditions in Sealed Chambers for Wafer-Level Bonding by Using Embedded Cavity

Molecular dynamics analysis of the influence of ion implantation parameters on ultra-precision machining of silicon carbide

Design of Triode Extraction System for a Dual Hollow Cathode Ion Source

Computer-Simulations Of The Ion-Implantation Process In Layered Materials

Numerical Studies of Collisionless and Collisional Sheath Evolution in Plasma Source Ion Implantations

Ion injection into EBIT with a miniature MEVVA ion sourse

Design Space of Electrostatic Chuck in Etching Chamber