Abstract:In this work, a novel one-transistor active pixel sensor (1T-APS) with adjustable self-adaptive sensitivity enabled by floating source/drain (S/D) is demonstrated on 22-nm fully depleted Si-on-insulator (FD-SOI) platform. Additional control gates (CGs) with floating S/Ds are incorporated into the sensor, which are parallel to the sensing gate (SG). For weak illumination, the CG channel keeps closed so that the photoresponse is only active for SG controlled region, resulting in high linear sensitivity, while the CG channel will automatically turn on when the illumination is strong enough. Correspondingly, the CG controlled region is connected with SG controlled region for photoresponse together, resulting in a relatively lower linear sensitivity. For very strong illumination, the 1T-APS will automatically switch to logarithmic response mode due to the activated virtual photodiode in the FD-SOI substrate. The sensitivity transition points in the linear–linear region and the linear–logarithmic region can be further adjusted by the bias of CG and back gate, respectively. The adjustable self-adaptive sensitivity indicates the great potential of the proposed 1T-APS for high-quality image sensing.

Optimization of Photoelectron In-Situ Sensing Device in FD-SOI

Optimization of Photoelectron In-Situ Sensing Device in FD-SOI

Suppressing crosstalk in the photoelectron <i>in</i>-<i>situ</i> sensing device (PISD) by double SOI

Photoelectron In-situ Sensing Device with Embedded Photodiode and Interface Passivation

A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology

An Active Pixel Sensor Array Based on Compact Photoelectron In-situ Sensing Device (PISD)

Novel Photodetectors and Image Sensors Based on Silicon-on-insulator Substrate.

A Compact Model of FDSOI Based 1-T Pixel Sensor for Design of In-sensor Computing

Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology

Novel Photodetectors and Image Sensors Based on SOI Substrate

FD-SOI-Based Pixel with Real-Time Frame Difference for Motion Extraction and Image Preprocessing

A New Photodetector on SOI

Deep-Depletion Effect in SOI Substrates and its Application in Photodetectors With Tunable Responsivity and Detection Range

A Novel One-Transistor Active Pixel Sensor with Tunable Sensitivity

Novel Photodetector Based On Fd-Soi Substrate With Interface Coupling Effect

Characterization of SOI pixel sensor using pinned depleted diode structure with AC-coupling on the diode

A Novel Photodetector with the Embedded Field-Induced P-N Photodiode in the SOI Substrate

Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

TCAD simulations of silicon strip and pixel sensor optimization

A novel photodetector based on the interface coupling effect in silicon-on-insulator MOSFETs

Floating Source/Drain Enabled Linear–Linear–Logarithmic Self-Adaptive One-Transistor Active Pixel Sensor