A Compact Model of FDSOI Based 1-T Pixel Sensor for Design of In-sensor Computing

G. H. Yu,Z. Zhou,R. Q. Chen,J. Q. Li,Y. Xiao,P. Huang,J. F. Kang,X. Y. Liu
DOI: https://doi.org/10.23919/sispad57422.2023.10319642
2023-01-01
Abstract:A compact model for photoresponse of Fully-Depleted Silicon-on-Insulator (FDSOI) based one-transistor (1-T) pixel sensor is proposed for the design of in-sensor computing. The model describes the photoresponse as the photoelectrons charging the device equivalent capacitors to obtain the threshold voltage (V th ) change and it is verified by both the TCAD and device in 22nm FDSOI technology node. By integrating the model into BSIM-IMG, the accuracy of array-scale in-sensor Vector-Matrix Multiplication (VMM) affected by device doping variation is evaluated using HSPICE.
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