Abstract:The development of high-sensitivity ultraviolet photodetectors, which can be compatible with the existing Si-based technique, is highly desirable in advanced applications. In this study, a double heterojunction ultraviolet photodetection device consisting of an ITO conductive glass covered by a layer of p-type poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer film, a single p-type Sb-doped ZnO microwire (ZnO:Sb MW), and an n-type Si substrate was proposed and demonstrated. Using dimethyl sulfoxide (DMSO) and carbon nanohorn (CNHs) as treated solvent, the electrical properties of PEDOT:PSS polymer film were positively increased. Correspondingly, the treated photodetector exhibited a strongest photoresponsivity of approximately 737.8 A/W and largest external quantum efficiency (EQE) of approximately 2.6 × 105%, which were significantly higher than those of the pristine devices. Besides, the transient response manifests its highly-stable and faster photoresponse speed of rising/falling times of ∼67 μs/2.29 ms. The enhanced photoresponse properties are attributed to the increased electrical properties of the DMSO&CNHs co-treated PEDOT:PSS film. Especially, the p-p heterojunction formed at the PEDOT:PSS/ZnO:Sb heterointerface, can effectively accelerate the transport of photogenerated electron-hole pairs, thus reducing the recombination probability. The proposed double heterojunction that meeting the criteria of low-cost and eco-friendly would be a competitive option for the large-scale fabrication of high-performance ultraviolet photodetectors, which are efficient and compatible with the existing Si-based integrated circuit technology.

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