Abstract:The static and dynamic characteristics of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) under gate and drain biases exhibit differential degradation after irradiation. Total ionizing dose (TID) irradiation caused threshold voltage shift and switch response degradation, and the degradation trends of these two parameters were not the same dependence on the bias. The threshold voltage of devices under test (DUT) shifted toward negative due to the radiation-induced positive oxide trapped charges. Turn-off time ( ${t} _{\text {off}}$ ) was more sensitive to TID irradiation compared to turn-on time ( ${t} _{\text {on}}$ ). The switch response changed after irradiation due to parasitic capacitance gate-to-drain capacitance (CGD) and threshold voltage degradation. It has been verified by Sentaurus TCAD 2-D simulations that the high-speed accumulation of gate oxide traps in the localized region of the trench gate MOS [U-shaped trench-gate metal–oxide–semiconductors (UMOS)] due to the nonuniform distribution of the electric field is the main reason for the special degradation of electrical parameters under drain bias. For TID radiation damage evaluation and radiation hardening of SiC MOSFETs under different biases, both static and dynamic performances should be considered. The experimental results provide valuable insights into the behavior of SiC MOSFETs under radiation and are crucial for designing reliable electronic systems for space and nuclear applications.

TID Effects on Soft-breakdown and Self-heating Characteristics of 400V SOI NLDMOSFETs

Investigation on Hot-Carrier-induced Degradation of SOI NLIGBT.

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Research of Hot-carrier-induced Degradation on SOI NLIGBT

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation

TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI P-Ldmosfets

Deep Insight of Self-Heating Effect Induced Hot Carrier Reliability Improvement in LDMOS Devices

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

Total ionizing dose effects in high breakdown voltage SOI devices

The Simulation and Study of Self-heating Effects in Fully Depleted SOI MOSFETs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET

Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

New Insight into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses