Abstract:Fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs fabricated using 0.2-mu m SOI technology with external body contact (EBC) and floating body (FB) structures are irradiated up to 500 krad(Si) using 60Co gamma rays under the transmission gate (TG) and OFF bias conditions, respectively. The threshold voltage shift of the back transistors due to radiation-induced charge trapping in the buried oxide (BOX) is used to characterize the total dose response of irradiated back transistors. The results indicate that, overall, the TG biased EBC transistors with various gate lengths are more sensitive to the total dose radiation than the OFF biased FB counterparts at low dose levels. Furthermore, for the shorter gate transistors with a supply voltage of 1.8 V, a relatively complex correlation exists between the total dose response and the gate length. In particular, the back transistor of the TG biased 0.20-mu m 1.8-V EBC transistor reveals smaller threshold voltage shifts than the OFF biased counterpart at approximately 500 krad(Si) because of the saturation of its threshold shift with increased doses, and a similar radiation response is observed for the TG biased 0.35-mu m EBC transistor with a supply voltage of 2.5 V. We found that the 2.5-V back transistors exhibited greater radiation hardness than the 1.8-V counterparts with the same bias configuration in most cases.

Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation

TID Effects on Soft-breakdown and Self-heating Characteristics of 400V SOI NLDMOSFETs

Investigation on Total-Ionizing-Dose Radiation Response for High Voltage Ultra-Thin Layer SOI LDMOS

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS

Total Dose Radiation Characteristics of High Voltage LDMOS on SIMOX Substrate

Total ionizing dose effects in high breakdown voltage SOI devices

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

Total Ionizing Dose Effect Induced Current Degradation for 300V SOI NLDMOS

Total Dose Effects with High Dose Rate in NMOS Transistors

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Investigation on Dynamic Characteristic Variations Caused by TID for SiC MOSFET Power Devices

Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

Three-Dimensional Simulation of Total Dose Effects on Ultra-Deep Submicron Devices

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology