Abstract:In this paper, the transient breakdown voltage (TrBV) of a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor (LDMOS) device was increased by introducing a step P-type doping buried layer (SPBL) below the buried oxide (BOX). Device simulation software MEDICI 0.13.2 was used to investigate the electrical characteristics of the new devices. When the device was turned off, the SPBL could enhance the reduced surface field (RESURF) effect and modulate the lateral electric field in the drift region to ensure that the surface electric field was evenly distributed, thus increasing the lateral breakdown voltage (BVlat). The enhancement of the RESURF effect while maintaining a high doping concentration in the drift region (Nd) in the SPBL SOI LDMOS resulted in a reduction in the substrate doping concentration (Psub) and an expansion of the substrate depletion layer. Therefore, the SPBL both improved the vertical breakdown voltage (BVver) and suppressed an increase in the specific on-resistance (Ron,sp). The results of simulations showed a 14.46% higher TrBV and a 46.25% lower Ron,sp for the SPBL SOI LDMOS compared to those of the SOI LDMOS. As the SPBL optimized the vertical electric field at the drain, the turn-off non-breakdown time (Tnonbv) of the SPBL SOI LDMOS was 65.64% longer than that of the SOI LDMOS. The SPBL SOI LDMOS also demonstrated that TrBV was 10% higher, Ron,sp was 37.74% lower, and Tnonbv was 10% longer than those of the double RESURF SOI LDMOS.

Study of TID Radiation Effects on the Breakdown Voltage of Buried P-Pillar SOI LDMOSFETs

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI P-Ldmosfets

New Insight into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation

Improving Breakdown Voltage Performance of SOI Power Device with Folded Drift Region

Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer

Investigation on Total-Ionizing-Dose Radiation Response for 700V Double-RESURF SOI LDMOS

Improvement of SOI Trench LDMOS Performance with Double Vertical Metal Field Plate

Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

High Voltage Buried Step-Doping P+ Layer Silicon-on-insulator Lateral Double Diffused Mosfet (SOI LDMOSI) with a Back-Gate

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Transistor with T-Dual Dielectric Buried Layers

Novel High Voltage LDMOS on Partial SOI with Double-Sided Charge Trenches

Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID

A High Voltage SOI Pldmos with a Partial Interface Equipotential Floating Buried Layer

Total ionizing dose effects in high breakdown voltage SOI devices

A Novel 700-V SOI LDMOS with Double-Sided Trench

A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region

Experimental and Theoretical Study of an Improved Breakdown Voltage SOI LDMOS with a Reduced Cell Pitch

Design of A 1200-V Thin-Silicon-Layer P-Channel Soi Ldmos Device