Deposited low temperature silicon GHz modulator

Yoon Ho Daniel Lee,Michael O Thompson,Michal Lipson,Michael O. Thompson
DOI: https://doi.org/10.1364/oe.21.026688
IF: 3.8
2013-10-29
Optics Express
Abstract:We demonstrate gigahertz electro-optic modulator fabricated on low temperature polysilicon using excimer laser annealing technique compatible with CMOS backend integration. Carrier injection modulation at 3 Gbps is achieved. These results open up an array of possibilities for silicon photonics including photonics on DRAM and on flexible substrates.
optics
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