Fast Thermo-Optical Modulators with Doped-Silicon Heaters Operating at 2 Μm.

Chuyu Zhong,Hui Ma,Chunlei Sun,Maoliang Wei,Yuting Ye,Bo Tang,Peng Zhang,Ruonan Liu,Junying Li,Lan Li,Hongtao Lin
DOI: https://doi.org/10.1364/oe.430756
IF: 3.8
2021-01-01
Optics Express
Abstract:The 2-μm-waveband has been recognized as a potential telecommunication window for next-generation low-loss, low-latency optical communication. Thermo-optic (TO) modulators and switches, which are essential building blocks in a large-scale integrated photonic circuit, and their performances directly affect the energy consumption and reconfiguration time of an on-chip photonic system. Previous TO modulation based on metallic heaters at 2-μm-waveband suffer from slow response time and high power consumption. In this paper, high-performance thermo-optical Mach–Zehnder interferometer and ring resonator modulators operating at 2-μm-waveband were demonstrated. By embedding a doped silicon (p++-p-p++) junction into the waveguide, our devices reached a record modulation efficiency of 0.17 nm/mW for Mach–Zehnder interferometer based modulator and its rise/fall time was 3.49 μs/3.46 μs which has been the fastest response time reported in a 2-μm-waveband TO devices so far. And a lowest Pπ power of 3.33 mW among reported 2-μm TO devices was achieved for a ring resonator-based modulator.
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