Abstract:Thin HfTiO gate dielectric is deposited by reactive co-sputtering method followed by wet or dry N2 anneal. The effects of Ti content on the performance of HfTiO gate dielectric are investigated by using different sputtering powers for the Ti target. Experimental results indicate that as the Ti content increases, the dielectric constant (κ) can increase up to 40 for a Ti content of 28%. However, when the Ti content is too high, the interface properties and gate leakage properties are deteriorated. On the contrary, results show that owing to the hydrolyzable property of GeOx, the wet-N2 anneal can greatly suppress the growth of unstable low-κ GeOx interlayer, resulting in lower interface-state density and gate leakage current, in addition to larger κ value. In this study, when the sputtering power of the Ti target is 80W together with a 25-W power for the Hf target and a post-deposition anneal (PDA) in wet-N2 ambient at 500°C for 300s, excellent device performance is achieved: equivalent oxide thickness of 0.72nm, equivalent dielectric constant of 39, interface-state density of 6.5×1011eV−1cm−2 and gate leakage current of 5.7×10−4A/cm2 at Vg=1V. Therefore, in order to obtain high-quality HfTiO gate dielectric for small-scaled Ge MOS devices, not only should the Ti content be optimized, the PDA should also be done in a wet-N2 ambient.

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Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Integrity of n-type channel surface for nano-node high-k gate dielectric

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Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Voltage stress exposing degradation rate of 28nm HK/MG nMOSFETs under different nitridation annealing temperatures

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GIDL and gated-diode metrologies for 28nm HK/MG nMOSFETs in nitridation annealing temperatures

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Q-factor Integrity of 28Nm-Node High-k Gate Dielectric

Dit Extraction of Nano-node HK/MG Nmosfets Treated with DPN Process under Diverse Nitrogen Concentration

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Kink Effect for 28 Nm N-Channel Field-Effect Transistors after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs