Abstract:This work presents an excellent metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. Forty‐four percentage of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the instability of the electrical conductivity. This work presents a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. The MOSFETs with excellent performance are fabricated by combining an H‐terminated channel and an epitaxially grown boron‐doped layer as the source/drain contacts of the diamond devices. According to the electrical statistical results of ≈110 devices on the polycrystalline diamond substrate, 44% of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. The normally‐off characteristics are more related to the higher amounts of nitrogen concentration than the grain boundaries. The stable boron‐doped source and drain provide a high concentration of holes, which facilitate transport in the surface p‐type channel induced by the H‐termination. The characteristics of the MOSFETs are inspiring for the fabrication of complementary inverter circuits on large diamond wafers.

Polycrystalline Diamond Normally-off MESFET Passivated by a MoO3 Layer

Polycrystalline Diamond MOSFET with MoO3 Gate Dielectric and Passivation Layer

High Temperature (300 °C) ALD Grown Al2O3 on Hydrogen Terminated Diamond: Band Offset and Electrical Properties of the MOSFETs

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

Diamond MOSFET with MoO<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub> doubly stacked gate dielectric

Polycrystalline Diamond RF MOSFET with MoO3 Gate Dielectric

Diamond Field Effect Transistors with MoO 3 Gate Dielectric

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

Research on the Hydrogen Terminated Single Crystal Diamond MOSFET with MoO 3 Dielectric and Gold Gate Metal

Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

H-diamond MOS Interface Properties and FET Characteristics with High-Temperature ALD-grown HfO2 Dielectric

650 Mw/mm Output Power Density of H‐terminated Polycrystalline Diamond MISFET at 10 GHz

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al 2 O 3 Gate Insulator With Drain Current Density Over 300 mA/mm

H-Terminated Diamond MOSFETs on High-Quality Diamond Film Grown by MPCVD

Normally-off hydrogen-terminated diamond field effect transistor with a bilayer dielectric of Er2O3/Al2O3

RF Performance of Hydrogenated Single Crystal Diamond MOSFETs

Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs with Al2O3/SiO2 Bi-Layer Passivation at 2 GHz

Electrical Characteristics of Normally off Hydrogen-Terminated Diamond Field Effect Transistors with Lanthanum Oxide Gate Dielectric

Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET

Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3