Abstract:This work presents an excellent metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. Forty‐four percentage of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. Diamond exhibits large application potential in the field of power electronics, owing to its excellent and desirable electronic properties. However, the main obstacles to its development originate from the small‐sized single‐crystal wafers and the instability of the electrical conductivity. This work presents a metal‐oxide‐semiconductor field‐effect transistor (MOSFET) on a diamond substrate derived from a five‐inch (110) highly preferred polycrystalline diamond film. The MOSFETs with excellent performance are fabricated by combining an H‐terminated channel and an epitaxially grown boron‐doped layer as the source/drain contacts of the diamond devices. According to the electrical statistical results of ≈110 devices on the polycrystalline diamond substrate, 44% of devices show normally‐off operation with a maximum current density of 400 mA mm−1, while 56% of devices demonstrate normally‐on operation with a maximum current density of 525 mA mm−1. The normally‐off characteristics are more related to the higher amounts of nitrogen concentration than the grain boundaries. The stable boron‐doped source and drain provide a high concentration of holes, which facilitate transport in the surface p‐type channel induced by the H‐termination. The characteristics of the MOSFETs are inspiring for the fabrication of complementary inverter circuits on large diamond wafers.

Polycrystalline Diamond MOSFET with MoO3 Gate Dielectric and Passivation Layer

Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET

Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al 2 O 3 Gate Insulator With Drain Current Density Over 300 mA/mm

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs with Al2O3/SiO2 Bi-Layer Passivation at 2 GHz

Oxidized-silicon-terminated Diamond p-FETs with SiO 2 -fiNing Shallow Trench Isolation Structures

Performance of hydrogen-terminated diamond MOSFET with LaB<sub>6</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

Performance of hydrogen-terminated diamond MOSFET with LaB6/Al2O3 bilayer dielectric

1.26 W/mm Output Power Density at 10 GHz for Si 3 N 4 Passivated H-Terminated Diamond MOSFETs

Small Subthreshold Swing Diamond Field Effect Transistors with SnO2 Gate Dielectric

MOSFETs on (110) C–H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

H-Terminated Diamond MOSFETs on High-Quality Diamond Film Grown by MPCVD

C-Si Interface on Sio2/(111) Diamond P-Mosfets with High Mobility and Excellent Normally-Off Operation

Recent progress in diamond-based MOSFETs

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation

Surface transfer doping of diamond using solution-processed molybdenum trioxide

Enhanced thermal stability of Ga2O3 MOSFETs with nanocrystalline diamond field plate