Abstract:Near-threshold voltage (NTV) design suffers severe challenge due to the dramatic increase in performance uncertainty introduced by process variation. This paper proposes an analytical approach based on Log-Normal (LN) distribution to characterize the statistical delay for NTV design considering the dominant threshold voltage variation from gate-level to circuit-level. At gate-level, the multivariable threshold voltage variation issue is solved by the equivalent threshold voltage method and equivalent drain current method for generic gates with stack topology and parallel topology, respectively. At circuit-level, a statistical timing model is proposed as the linear combination of the independent statistical delays of all gates in the path with step input by considering the varied correlation between adjacent gates. To the best of our knowledge, we firstly propose a statistical timing model analytically for practical circuit path with physical insights of supply voltage, transistor size, and load capacitance. The characterization effort for each path is only one-time SPICE simulation, which is negligible compared with Monte Carlo (MC) simulation in statistical static timing analysis (SSTA) methods. Experimental results under a commercial 28-nm CMOS process show the proposed models have high accuracy at low supply voltage compared with MC simulations, where the modeling errors for the mean and variance of gate delay can be limited within 1.54% and 11.2%, respectively. Moreover, as for the practical paths in ITC'99 benchmark, the maximum modeling errors of mean, variance, minimum delay, and maximum delay is less than 3.04%, 11.40%, 4.50%, and 2.87%, respectively.

A Pico-second Resolution Sensor of NTV DFF Timing Variation with Cancelling Errors from PVT and RC Delay along Testing Path

Reliability Enhancement Methods for Relaxation Oscillator with Delay Time Cancellation

TEPD: A Compound Timing Detection of Both Data-Transition and Path-Activation for Reliable In-Situ Timing Error Detection and Correction in 28nm CMOS

Performances Study on TDC Timing Samples Resolution in a MVT Chip

A Compact Pico-Second In-Situ Sensor Using Programmable Ring Oscillators For Advanced On Chip Variation Characterization In 28nm Hkmg

A Simple Steady Timing Resilient Sample Based On Delay Data Sense Detection

A High-Precision PVT-Tolerance Adaptive Clock Circuit Over Wide Frequencies in 28nm CMOS

Design and Implementation of a High-resolution SRAM Timing Parameters Measuring Circuit

A Statistical Timing Model for Low Voltage Design Considering Process Variation

FLC-EDC: A Fast Low-Cost Error Detection and Correction Scheme for AVFS System Based on Flip-Flops Resampling in 28-Nm CMOS

A Light-Weight Timing Resilient Scheme for Near-Threshold Efficient Digital ICs

A Vernier Time-to-Digital Converter with 1.5ps Resolution for an All-Digital Phase Locked Loop in 28nm CMOS.

Design of A Picosecond Resolution Control Loop for Fine TDC Based on 0.11 Μm CMOS Process

A High-Linearity Vernier Time-to-Digital Converter on FPGAs With Improved Resolution Using Bidirectional-Operating Vernier Delay Lines

Design of Light-Weight Timing Error Detection and Correction Circuits for Energy-Efficient Near-Threshold Voltage Operation

A 10ps 500MS/s two-channel Vernier TDC in 0.18um CMOS technology

HTD: A Light-Weight Holosymmetrical Transition Detector Based In-Situ Timing Monitoring Technique for Wide-Voltage-range in 40nm CMOS.

A Wide-Voltage-Range Transition-Detector with In-Situ Timing-Error Detection and Correction Based on Pulsed-Latch Design in 28 Nm CMOS.

A Low-Overhead Timing Monitoring Technique for Variation-Tolerant Near-Threshold Digital Integrated Circuits

A 0.048ns/°c Delay Generator with Variation Self-Calibration Structure(vscs) for HVICs

An Offset-Cancellation Technique Using Charge-Trap Transistors and Asynchronous Programming Scheme