Direct Growth of 5 In. Uniform Hexagonal Boron Nitride on Glass for High‐Performance Deep‐Ultraviolet Light‐Emitting Diodes
Qiucheng Li,Qingqing Wu,Jing Gao,Tongbo Wei,Jingyu Sun,Hao Hong,Zhipeng Dou,Zhepeng Zhang,Mark H. Ruemmeli,Peng Gao,Jianchang Yan,Junxi Wang,Jinmin Li,Yanfeng Zhang,Zhongfan Liu
DOI: https://doi.org/10.1002/admi.201800662
IF: 5.4
2018-01-01
Advanced Materials Interfaces
Abstract:The direct coating of 2D hexagonal boron nitride (h-BN) on insulating solid glass will endow glass with advanced properties, thus offering killer applications of the new type hybrid of h-BN glass. However, daunting challenges still remain regarding the direct growth methodology of h-BN on glass. Herein, a catalyst-free chemical vapor deposition route for the direct synthesis of 5 in. uniform h-BN thin films on functional quartz and sapphire glass is developed. The optical transparency, surface wetting, and thermal conductivity of glass are readily tailored by varying the deposited h-BN thicknesses from monolayer to over 20 layers. Encouragingly, the as-obtained h-BN/sapphire glass can serve as a stress-releasing substrate for the van-der-Waals epitaxial growth of AlN functional layers, as well as a thermal conductive template for constructing high-performance deep-ultraviolet light-emitting diodes. This work hereby provides a brand new direction for the application of h-BN glass in next-generation solid-state lighting devices.