Abstract:GaN-on-Si high electron mobility transistors (HEMTs) have attracted attention for power device applications due to their low cost and large-area availability [1]. Recently, bidirectional switches are highly desirable in many industrial bidirectional power conversion applications, such as rolling mills, elevators, and wind power generation. In addition, normally-off unidirectional HEMTs can be valuable devices to implement the high-performance bidirectional switches [2, 3]. Usually, normally-off unidirectional HEMTs are realized by a Schottky barrier diode (SBD) embedded in the drain electrode in HEMTs. Techniques using fluorine implantation or metal oxide semiconductors have been employed. However, the p-GaN gate technique [4] with good controllability and stability in threshold voltage (Vth) has not been reported in normally-off unidirectional HEMTs. Besides, recessed SBD [5] and field-plate techniques [6] can provide relevant references in unidirectional HEMTs with small turnon voltage (Von), high breakdown voltage (BV), and good dynamic performance. In this study, a unidirectional p-GaN HEMT with recessed Schottky drain and composite source-drain field plates (RS-FP-HEMT) is experimentally demonstrated. The influence of drain voltage stress on the dynamic performance is investigated and revealed. Experiment. Figures 1(a) and (b) show the schematic cross-sectional structures of the conventional p-GaN HEMT with ohmic drain (C-HEMT) and proposed RS-FP-HEMT, respectively. Both devices were fabricated on a GaN-on-Si wafer. The epitaxial structure consists of a 3.4 μm buffer layer, 320 nm i-GaN channel layer, 0.7 nm AlN interlayer, 15 nm Al0.2Ga0.8N barrier layer, and 75 nm p-GaN layer with Mg doping concentration of 1× 10 cm. Device fabrication started with the formation of p-GaN gate island by reactive ion etching (RIE). Then, Ti/Al/Ni/Au metal stack was evaporated and annealed at 850◦C for 30 s in N2 ambient. The recessed Schottky drain was formed by a low damage RIE process, and the depth is ∼25 nm. Afterward, the BOE treatment and annealing at 450◦C in N2 ambient were implemented [5]. The gate and drain metal were simultaneously deposited by sputtering W. Subsequently, 250 nm Si3N4 and 400 nm SiO2 were deposited by plasma-enhanced chemical vapor deposition for surface passivation. Ni/Au metal stack was formed as the composite source-drain field plates. C-HEMT was also fabricated on the same wafer for reference. Both devices had a 2 μm source-gate spacing (LGS), 4 μm p-GaN gate length (LG), 20 μm gate-drain spacing (LGD), and 5 μm source field plate length (LSFP). In RS-FP-HEMT, the extended length over the barrier region (LEX) of recessed Schottky drain and the length of drain field plate (LDFP) were both 2.5 μm. Results and discussion. In Figure 1(c), both devices showed the same Vth of 2.1 V at ID = 1 mA/mm. A low Von of 0.36 V (at ID = 1 mA/mm) was achieved by low work function W in RS-FP-HEMT. In addition, the differential on-resistance (Ron) of 49 Ω·mm in RS-FP-HEMT was close to that of C-HEMT (48.2 Ω·mm). As shown in Figure 1(d). At 150C, the Von reduced to 0.3 V. The reverse leakage current increased from 0.4 μA/mm at room temperature to 11 μA/mm at 150◦C. In Figure 1(e), both devices exhibited a similar forward BV (BVF) of 772 V at 1 μA/mm. C-HEMT had no reverse blocking capability, whereas the RS-FP-HEMT obtained a reverse BV (BVR) of −769 V. Thus, a high BVR could be achieved without sacrificing the Von via field plate techniques, which could improve the tradeoff between Von and BVR. As shown in Figure 1(f), RS-FP-HEMT exhibited a higher Vth, lower Von, and higher BVR than other reported normally-off unidirectional GaN HEMTs on Si substrate. In Figures 1(g) and (h), the sharp electric field peak crowded at the gate and drain edges in the case of without field plate. When composite source-drain field plates were introduced, the peak electric field was significantly suppressed. Besides, the wider electric field distribution and

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